公开(公告)号：KR1020020067710A

公开(公告)日：2002-08-24

申请号：KR1020010007963

申请日：2001-02-17

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  김태곤 ,  신윤하 ,  윤재성 ,  황정남 ,  양정수

IPC: C23C14/00

CPC classification number: C23C14/325 ,  C23C14/20

Abstract: PURPOSE: An apparatus and a method for depositing a metallic thin film for shielding an electromagnetic wave are provided to deposit the metallic thin film on a substrate simply, safely and environment friendly by implanting the plasma ions onto the substrate after generating metal plasma ions. CONSTITUTION: The apparatus for depositing a metallic thin film for shielding an electromagnetic wave comprises a plasma generation part(10) in which metal plasma ions are generated between the anode and the cathode; a particle removing filter part(20) removing neutral particles produced during generation of the metal plasma ions and guiding the metal plasma ions; an ion implantation part(30) implanting the metal plasma ions guided from the particle removing filter part(20) onto a substrate of a sample holder; and a vacuum chamber(40) forming an external appearance so that the metal plasma ions are generated under the vacuum state to be implanted onto the substrate, wherein the plasma generation part(10) comprises a trigger power source part(11) evaporating a cathode material between the anode and cathode by impressing a high voltage to a trigger electrode positioned between the anode and cathode; and a pulse power source part(12) generating arc by impressing a pulse type voltage to the anode as the high voltage is being impressed to the trigger, and the particle removing filter part(20) comprises a coil part guiding the metal plasma ions to the sample holder; and a coil power source part forming a magnetic field in the coil part by impressing a pulse type current to the coil part.

Abstract translation: 目的：提供一种用于沉积用于屏蔽电磁波的金属薄膜的装置和方法，用于通过在产生金属等离子体离子之后将等离子体离子注入到衬底上，将金属薄膜简单，安全和环境地沉积在衬底上。 构成：用于沉积用于屏蔽电磁波的金属薄膜的装置包括其中在阳极和阴极之间产生金属等离子体离子的等离子体产生部分（10）; 去除过滤器部件（20），去除在产生金属等离子体离子期间产生的中性粒子并引导金属等离子体离子; 离子注入部分（30）将从颗粒去除过滤器部分（20）引导的金属等离子体离子注入到样品保持器的基底上; 和形成外观的真空室（40），使得在真空状态下产生金属等离子体离子以注入到基板上，其中等离子体产生部分（10）包括将阴极蒸发的触发电源部分（11） 通过向位于阳极和阴极之间的触发电极施加高电压而在阳极和阴极之间施加材料; 以及脉冲电源部分（12），当高电压被施加到触发器时，通过向阳极施加脉冲型电压而产生电弧，并且所述颗粒去除过滤器部分（20）包括将金属等离子体离子引导到 样品架; 以及线圈电源部，其通过向所述线圈部施加脉冲型电流而在所述线圈部中形成磁场。