公开(公告)号：KR100402200B1

公开(公告)日：2003-10-17

申请号：KR1020010003412

申请日：2001-01-20

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  송종한 ,  송재훈 ,  권순남 ,  황정남

IPC: H01J37/30

Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).

Abstract translation: 用途：提供气体团簇离子加速器，利用绝热膨胀产生气体团簇，随时调整气体团簇的加速能量。 本发明公开了一种气体团簇离子加速器，包括团簇生成单元，电离单元32，透镜单元52，簇测量单元36，加速单元54和扫描单元56,58。 气体发生单元在绝热膨胀条件下将气体从高压喷射到低压，以将气体转化为团簇状态。 电离单元（32）使簇生成单元的簇离子化。 透镜部分（52）调整来自电离单元（32）的电离簇的焦点。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速离子化簇从加速单元（54）扫描到目标（75）上。

公开(公告)号：KR1020020062420A

公开(公告)日：2002-07-26

申请号：KR1020010003412

申请日：2001-01-20

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  송종한 ,  송재훈 ,  권순남 ,  황정남

IPC: H01J37/30

CPC classification number: H01J37/317 ,  H01J37/34 ,  H01J2237/31701

Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).

Abstract translation: 目的：提供气体聚集离子加速器，通过绝热膨胀产生气体簇，容易调节气体团簇的加速能。 构成：气体簇离子加速器包括簇生成单元，离子化单元（32），透镜单元（52），簇测量单元（36），加速单元（54）和扫描单元（56,58）。 集群发电机组在绝热膨胀条件下将气体从高压到低压喷射，将气体转化为集束状态。 离子化单元（32）使簇从簇生成单元离子化。 透镜部分（52）从电离单元（32）调节离子簇的聚焦。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速的离子簇从加速单元（54）扫描到目标（75）上。

公开(公告)号：KR1020020067710A

公开(公告)日：2002-08-24

申请号：KR1020010007963

申请日：2001-02-17

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  김태곤 ,  신윤하 ,  윤재성 ,  황정남 ,  양정수

IPC: C23C14/00

CPC classification number: C23C14/325 ,  C23C14/20

Abstract: PURPOSE: An apparatus and a method for depositing a metallic thin film for shielding an electromagnetic wave are provided to deposit the metallic thin film on a substrate simply, safely and environment friendly by implanting the plasma ions onto the substrate after generating metal plasma ions. CONSTITUTION: The apparatus for depositing a metallic thin film for shielding an electromagnetic wave comprises a plasma generation part(10) in which metal plasma ions are generated between the anode and the cathode; a particle removing filter part(20) removing neutral particles produced during generation of the metal plasma ions and guiding the metal plasma ions; an ion implantation part(30) implanting the metal plasma ions guided from the particle removing filter part(20) onto a substrate of a sample holder; and a vacuum chamber(40) forming an external appearance so that the metal plasma ions are generated under the vacuum state to be implanted onto the substrate, wherein the plasma generation part(10) comprises a trigger power source part(11) evaporating a cathode material between the anode and cathode by impressing a high voltage to a trigger electrode positioned between the anode and cathode; and a pulse power source part(12) generating arc by impressing a pulse type voltage to the anode as the high voltage is being impressed to the trigger, and the particle removing filter part(20) comprises a coil part guiding the metal plasma ions to the sample holder; and a coil power source part forming a magnetic field in the coil part by impressing a pulse type current to the coil part.

Abstract translation: 目的：提供一种用于沉积用于屏蔽电磁波的金属薄膜的装置和方法，用于通过在产生金属等离子体离子之后将等离子体离子注入到衬底上，将金属薄膜简单，安全和环境地沉积在衬底上。 构成：用于沉积用于屏蔽电磁波的金属薄膜的装置包括其中在阳极和阴极之间产生金属等离子体离子的等离子体产生部分（10）; 去除过滤器部件（20），去除在产生金属等离子体离子期间产生的中性粒子并引导金属等离子体离子; 离子注入部分（30）将从颗粒去除过滤器部分（20）引导的金属等离子体离子注入到样品保持器的基底上; 和形成外观的真空室（40），使得在真空状态下产生金属等离子体离子以注入到基板上，其中等离子体产生部分（10）包括将阴极蒸发的触发电源部分（11） 通过向位于阳极和阴极之间的触发电极施加高电压而在阳极和阴极之间施加材料; 以及脉冲电源部分（12），当高电压被施加到触发器时，通过向阳极施加脉冲型电压而产生电弧，并且所述颗粒去除过滤器部分（20）包括将金属等离子体离子引导到 样品架; 以及线圈电源部，其通过向所述线圈部施加脉冲型电流而在所述线圈部中形成磁场。

公开(公告)号：KR100351197B1

公开(公告)日：2002-09-05

申请号：KR1020000046490

申请日：2000-08-11

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  양정수 ,  김태곤 ,  황정남

IPC: H01L21/28

Abstract: 금속이온을 포함하는 플라즈마를 이용한 금속박막 형성방법에 관하여 개시한다. 본 발명은, 금속이온이 포함된 플라즈마에 기판을 노출시키되, 상기 기판에 수∼수십 kV대의 음의 고전압을 인가함으로써 상기 기판 표면에 금속이온주입에 따른 동적 이온선 혼합 효과에 의한 계면 혼합층을 형성시킨 후 금속박막을 증착시키는 것을 특징으로 한다. 본 발명에 의하면, 종래와 같이 접착력의 개선을 위한 별도의 전처리 공정을 행하지 않고도 단 한번의 스텝(step)으로 접착력이 개선된 금속박막을 형성시킬 수 있다.

公开(公告)号：KR1020020013992A

公开(公告)日：2002-02-25

申请号：KR1020000046490

申请日：2000-08-11

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  양정수 ,  김태곤 ,  황정남

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a metal thin film using plasma including a metal ion is provided to improve adhesion of the metal thin film, by making the metal ion implanted into a substrate in an initial state of a deposition process so that an interface composite layer is formed. CONSTITUTION: The substrate is exposed to the plasma including the metal ion, and a negative voltage is applied to the substrate. The metal thin film(102) is deposited after the interface composite layer(100) caused by a dynamic ion mixing effect according to the injection of the metal ion is formed on the substrate.

Abstract translation: 目的：提供使用包含金属离子的等离子体形成金属薄膜的方法，以通过在沉积工艺的初始状态下将金属离子注入到基板中，从而提高金属薄膜的粘合性，使得界面复合层 形成了。 构成：将衬底暴露于包括金属离子的等离子体，并向衬底施加负电压。 根据在基板上形成金属离子的注入，通过动态离子混合效应在界面复合层（100）之后，沉积金属薄膜（102）。