中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

5 records (took 0.023 seconds)

    INSPECTION METHOD AND APPARATUS, AND LITHOGRAPHIC APPARATUS
    1.
    发明申请
    INSPECTION METHOD AND APPARATUS, AND LITHOGRAPHIC APPARATUS 有权
    检验方法和装置，以及平面设备

    公开(公告)号：US20160327870A1

    公开(公告)日：2016-11-10

    申请号：US15105517

    申请日：2014-11-07

    Applicant: ASML Netherlands B.V.

    Inventor： Kyu Kab RHE ,  David DECKERS ,  Hubertus Johannes Gertrudus SIMONS ,  Thomas THEEUWES

    IPC: G03F7/20

    CPC classification number: G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

    Abstract: A method of correcting an image characteristic of a substrate onto which one or more product features have been formed using a lithographic process, and an associated inspection apparatus method. The method includes measuring an error in the image characteristic of the substrate, and determining a correction for a subsequent formation of the product features based upon the measured error and a characteristic of one or more of the product feature(s).

    Abstract translation: 使用光刻工艺校正已经形成了一个或多个产品特征的基板的图像特性的方法以及相关联的检查装置方法。 该方法包括测量衬底的图像特性中的误差，以及基于所测量的误差和一个或多个产品特征的特性来确定随后形成产品特征的校正。

    DEVICE MANUFACTURING METHOD
    3.
    发明申请
    DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20200081353A1

    公开(公告)日：2020-03-12

    申请号：US16493835

    申请日：2018-03-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hubertus Johannes Gertrudus SIMONS ,  Everhardus Cornelis MOS ,  Xiuhong WEI ,  Reza MAHMOODI BARAM ,  Hadi YAGUBIZADE ,  Yichen ZHANG

    IPC: G03F7/20

    Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

    Method of Applying a Pattern to a Substrate, Device Manufacturing Method and Lithographic Apparatus for Use in Such Methods
    5.
    发明申请
    Method of Applying a Pattern to a Substrate, Device Manufacturing Method and Lithographic Apparatus for Use in Such Methods 有权
    将图案应用于基板的方法，用于这种方法的装置制造方法和平版印刷装置

    公开(公告)号：US20150153656A1

    公开(公告)日：2015-06-04

    申请号：US14613687

    申请日：2015-02-04

    Applicant: ASML Netherlands B.V.

    Inventor： Stefan Cornelis Theodorus VAN DER SANDEN ,  Richard Johanne Franciscus VAN HAREN ,  Hubertus Johannes Gertrudus SIMONS ,  Remi Daniel Marie EDART ,  Xiuhong WEI ,  Irina LYULINA ,  Michael KUBIS

    IPC: G03F7/20

    CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

    Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

    Abstract translation: 衬底被加载到光刻设备的衬底支撑件上，之后设备测量衬底对准标记的位置。 这些测量定义了第一校正信息，允许设备在衬底上的一个或多个所需位置上施加图案。 附加的第二校正信息用于增强图案定位的精度，特别是校正标称对准格栅的较高阶失真。 第二校正信息可以基于当对同一衬底施加先前图案时制作的对准标记的位置的测量。 第二校正信息可以替代地或另外基于在当前衬底之前已被图案化的类似衬底上进行的测量。

Patent Agency Ranking