公开(公告)号：US20200081353A1

公开(公告)日：2020-03-12

申请号：US16493835

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Hubertus Johannes Gertrudus SIMONS ,  Everhardus Cornelis MOS ,  Xiuhong WEI ,  Reza MAHMOODI BARAM ,  Hadi YAGUBIZADE ,  Yichen ZHANG

IPC: G03F7/20

Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.