公开(公告)号：US20200081353A1

公开(公告)日：2020-03-12

申请号：US16493835

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Hubertus Johannes Gertrudus SIMONS ,  Everhardus Cornelis MOS ,  Xiuhong WEI ,  Reza MAHMOODI BARAM ,  Hadi YAGUBIZADE ,  Yichen ZHANG

IPC: G03F7/20

Abstract: A device manufacturing method includes: exposing a first substrate using a lithographic apparatus to form a patterned layer having first features; processing the first substrate to transfer the first features into the first substrate; determining displacements of the first features from their nominal positions in the first substrate; determining a correction to at least partly compensate for the displacements; and exposing a second substrate using a lithographic apparatus to form a patterned layer having the first features, wherein the correction is applied for or during the exposing the second substrate.

公开(公告)号：US20200278614A1

公开(公告)日：2020-09-03

申请号：US16762982

申请日：2018-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Bijoy RAJASEKHARAN ,  Lydia Marianna VERGAIJ-HUIZER ,  Jochem Sebastiaan WILDENBERG ,  Ronald VAN ITTERSUM ,  Pieter Gerardus Jacobus SMORENBERG ,  Robertus Wilhelmus VAN DER HEIJDEN ,  Xiuhong WEI ,  Hadi YAGUBIZADE

IPC: G03F7/20

Abstract: A method for determining a plurality of corrections for control of at least one manufacturing apparatus used in a manufacturing process for providing product structures to a substrate in a plurality of layers, the method including: determining the plurality of corrections including a correction for each layer, based on an actuation potential of the applicable manufacturing apparatus used in the formation of each layer, wherein the determining includes determining corrections for each layer simultaneously in terms of a matching parameter.

公开(公告)号：US20220334503A1

公开(公告)日：2022-10-20

申请号：US17640880

申请日：2020-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Yingchao CUI ,  Hadi YAGUBIZADE ,  Xiuhong WEI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Sarathi ROY ,  Yichen ZHANG ,  Mohammad Reza KAMALI ,  Sang Uk KIM

IPC: G03F7/20

Abstract: A method for determining lithographic matching performance includes obtaining first monitoring data from recurrent monitoring for stability control for an available EUV scanner. For a DUV scanner, second monitoring data is similarly obtained from recurrent monitoring for stability control. The EUV first monitoring data are in a first layout. The DUV second monitoring data are in a second layout. A cross-platform overlay matching performance between the first lithographic apparatus and the second lithographic apparatus is determined based on the first monitoring data and the second monitoring data. This is done by reconstructing the first and/or second monitoring data into a common layout to allow comparison of the first and second monitoring data.

公开(公告)号：US20150153656A1

公开(公告)日：2015-06-04

申请号：US14613687

申请日：2015-02-04

Applicant: ASML Netherlands B.V.

Inventor： Stefan Cornelis Theodorus VAN DER SANDEN ,  Richard Johanne Franciscus VAN HAREN ,  Hubertus Johannes Gertrudus SIMONS ,  Remi Daniel Marie EDART ,  Xiuhong WEI ,  Irina LYULINA ,  Michael KUBIS

IPC: G03F7/20

CPC classification number: G03F7/70616 ,  G03F7/70141 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7088

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract translation: 衬底被加载到光刻设备的衬底支撑件上，之后设备测量衬底对准标记的位置。 这些测量定义了第一校正信息，允许设备在衬底上的一个或多个所需位置上施加图案。 附加的第二校正信息用于增强图案定位的精度，特别是校正标称对准格栅的较高阶失真。 第二校正信息可以基于当对同一衬底施加先前图案时制作的对准标记的位置的测量。 第二校正信息可以替代地或另外基于在当前衬底之前已被图案化的类似衬底上进行的测量。