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    1.
    发明专利
    未知

    公开(公告)号：AT523263T

    公开(公告)日：2011-09-15

    申请号：AT05705442

    申请日：2005-01-07

    Applicant: BREWER SCIENCE INC

    Inventor： LI CHENGHONG ,  RUBEN KIMBERLY ,  FLAIM TONY

    IPC: B05D1/36 ,  B32B9/04 ,  B81C1/00 ,  C09D125/12 ,  H01L21/308 ,  H01L21/311

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH
    2.
    发明专利
    HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH 未知

    公开(公告)号：SG175589A1

    公开(公告)日：2011-11-28

    申请号：SG2011072709

    申请日：2007-09-21

    Applicant: BREWER SCIENCE INC

    Inventor： PILLALAMARRI SUNIL K ,  LI CHENGHONG

    Abstract: New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a earner wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process.FIGURE 1

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    3.
    发明专利
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 未知

    公开(公告)号：SG152244A1

    公开(公告)日：2009-05-29

    申请号：SG2009025776

    申请日：2005-01-07

    Applicant: BREWER SCIENCE INC

    Inventor： LI CHENGHONG ,  RUBEN KIMBERLY A ,  FLAIM TONY D

    IPC: B32B9/04 ,  C09D125/12 ,  H01L21/308 ,  H01L21/311

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition- polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY
    5.
    发明申请
    WET DEVELOPABLE HARD MASK IN CONJUNCTION WITH THIN PHOTORESIST FOR MICRO PHOTOLITHOGRAPHY 审中-公开
    与薄膜光刻胶相结合的可湿性硬面膜

    公开(公告)号：WO2005001901A3

    公开(公告)日：2005-12-01

    申请号：PCT/US2004018851

    申请日：2004-06-10

    Applicant: BREWER SCIENCE INC ,  SUN SAM X ,  LI CHENGHONG

    Inventor： SUN SAM X ,  LI CHENGHONG

    IPC: G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03C5/00 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/30 ,  H01L20060101 ,  H01L21/308 ,  H01L21/31 ,  H01L21/3213

    CPC classification number: G03F7/091 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  H01L21/3081 ,  H01L21/32139

    Abstract: A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion etch (RIE). The protective layer is photosensitive and anti-reflective. An extremely thin photoresist layer is coated on top of the protective layer. The stack of the films is selectively exposed to actinic radiation at a wavelength determined by the sensitivities of the protective layer and photoresist layer. The latent images on the photoresist and protective layers resulting from the exposure are developed with a common alkaline developer. The three dimensional patterns of photoresist and underlying protective layer are formed simultaneously by the single exposure and single development. When the underlying substrate is etched by RIE, the protective layer is the masking layer, not the photoresist.

    Abstract translation: 提供了与非常薄的光致抗蚀剂结合使用硬掩模或保护层的新颖方法。 在该过程中，保护层的薄膜被涂覆在待通过反应离子蚀刻（RIE）选择性修饰的基底的表面上。 保护层是光敏的和抗反射的。 在保护层的顶部涂覆极薄的光致抗蚀剂层。 以由保护层和光致抗蚀剂层的敏感度确定的波长选择性地暴露于光化辐射。 用普通的碱性显影剂显影在光致抗蚀剂和由曝光产生的保护层上的潜像。 光刻胶和下层保护层的三维图案通过单次曝光和单次显影同时形成。 当通过RIE蚀刻底层衬底时，保护层是掩模层，而不是光致抗蚀剂。

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