公开(公告)号：JPH09186328A

公开(公告)日：1997-07-15

申请号：JP35056296

申请日：1996-12-27

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ANTONIO GURIMARUDEI ,  ANTONIINO SHIRATSUCHI ,  FUERUCHIO FURISHINA ,  JIYUSETSUPE FUERURA

IPC: H01L21/336 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a MOS gate power device having low gate resistance, improved dynamic performance and high frequency performance. SOLUTION: A MOS gate power device contains a P-type web structure formed on an N semiconductor layer 2. The P-type web structure contains a P-type annular frame part 6 arranged on the N semiconductor layer 2 surrounding a plurality of P-type body parts 9, and a P-type long and narrow strip 6 extended to the direction almost crossing at right angle with the P-type body parts 9. The end part of the P-type long and narrow strip 6 is incorporated with the P-type annular frame part.

公开(公告)号：JPH0822995A

公开(公告)日：1996-01-23

申请号：JP6864092

申请日：1992-03-26

Applicant: CONS RIC MICROELETTRONICA ,  SGS THOMSON MICROELECTRONICS

Inventor： FUERUTSUCHIO FURIISHINA ,  JIYUSETSUPE FUERURA

IPC: H01L29/73 ,  H01L21/22 ,  H01L21/322 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/07 ,  H01L27/082 ,  H01L29/732 ,  H01L29/861

Abstract: PURPOSE: To make it possible to form a single integration structure containing a bipolar power element and a fast diode. CONSTITUTION: This structure of a bipolar element and a fast diode consists of a single chip 1 of semiconductor material, and the single chip contains a region 32 containing long-life minority carriers where a bipolar power element having a high current density is to be formed, and at least one region 20, 21 containing short-life minority carriers where a fast diode is to be formed.

公开(公告)号：JPH07221346A

公开(公告)日：1995-08-18

申请号：JP27969094

申请日：1994-10-20

Applicant: CONS RIC MICROELETTRONICA

Inventor： SARUBATOORE YUUGO KANPISAANO ,  SARUBATOORE RONBARUDO ,  JIYUSETSUPE FUERURA ,  ARUBERUTO PORUMAN ,  JIERURASU NIKORAASU FUAN DEN H

IPC: H05B33/10 ,  H01L21/265 ,  H01L33/34 ,  H05B33/12 ,  H05B33/18 ,  H01L33/00

Abstract: PURPOSE: To provide silicon using electroluminescent material as a base and a semiconductor device which is clear of conventional technical problems. CONSTITUTION: Electroluminescent material and a semiconductor electroluminescent device include a mixture layer 3 formed by mixing silicon oxides doped with rare earth element ions so as to allow the material and the device to emit light at room temperature. Electroluminescence is caused by the rare earth element ions. An implant having group V or group III element of the periodic table of elements is supplied to a PN junction 3. The requirement for the obtained structure is that it should be heat-treated at a temperature ranging from 400 deg.C to 1100 deg.C.