公开(公告)号：CA912933A

公开(公告)日：1972-10-24

申请号：CA912933D

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  SEDGWICK THOMAS O

公开(公告)号：FR2333349A1

公开(公告)日：1977-06-24

申请号：FR7629973

申请日：1976-09-30

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  PLISKIN WILLIAM A

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidiation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to a dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：CA1066815A

公开(公告)日：1979-11-20

申请号：CA266780

申请日：1976-11-29

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  PLISKIN WILLIAM A

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/331 ,  H01L21/762 ,  H01L29/73

Abstract: A semiconductor device, such as a transistor, integrated circuit or the like, having a pattern of oxidized and densified porous silicon regions extending onto one of its major surfaces for isolating regions of the semiconductor is manufacturable by a relatively simple process. The process involves forming porous silicon regions in the surface of the semiconductor body such as a silicon wafer, in the areas where dielectric isolation between semiconductor devices is desired. The porous silicon regions are then oxidized at a temperature sufficient to completely oxidize the porous silicon. The oxidation is such that the oxidized porous silicon extends above the surface of the semiconductor wafer. The oxidized porous silicon regions are then subjected to a temperature higher than the oxidizing temperature utilized in the previous step to cause the densification of the oxidized porous silicon regions. The result of this densification step is the collapse of the porous oxide to the dense structure which is substantially planar with the surface of the semiconductor wafer. This densified silicon dioxide structure has an etch rate which is substantially the same as thermally grown silicon dioxide.

公开(公告)号：FR2420194A1

公开(公告)日：1979-10-12

申请号：FR7903174

申请日：1979-02-01

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  CUOMO JEROME J ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT J

IPC: C23C14/00 ,  C21D6/00 ,  C22F1/00 ,  C23C14/14 ,  C23C14/58 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/14 ,  H01F10/02 ,  C22C19/00 ,  C22C38/00 ,  C22F3/02

Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.

公开(公告)号：CA2064641A1

公开(公告)日：1992-11-03

申请号：CA2064641

申请日：1992-04-01

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  DENISON EDWARD V ,  KAHWATY VINCENT N ,  STEVING GERALD

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/127

Abstract: An interleaved bi-directional magnetic tape head for contact recording has a stripe poletip 30 in the form of a thin film of a soft magnetic material deposited onto a magnetic ferrite substrate 22. A second thin film polepiece 40 is deposited over a gap region 26. A closure block 24 of a non-magnetic ceramic encloses the layers together with leveling insulation layers 32, 34 and deposited activating conductor turns 36. The stripe poletip extends for a distance just short of the first conductor turn and provides a balancing of the saturation moment of the pole pieces and provides for better recording capability, especially when operating in a trailing magnetic ferrite mode.

公开(公告)号：FR2289050A1

公开(公告)日：1976-05-21

申请号：FR7526334

申请日：1975-08-19

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  BROADIE ROBERT W ,  HULL EDWARD M ,  POGGE HANS B

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/18 ,  H01L29/36 ,  H01L29/68

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.