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    TRANSITION METAL DOPED EuO FILMS
    2.
    发明授权
    TRANSITION METAL DOPED EuO FILMS 失效
    TRANSITION金属镀膜EuO膜

    公开(公告)号：US3639167A

    公开(公告)日：1972-02-01

    申请号：US3639167D

    申请日：1969-11-13

    Applicant: IBM

    Inventor： AHN KIE Y

    IPC: H01F10/18 ,  G11C13/06 ,  H01F10/10 ,  H01F10/187 ,  H01F41/20 ,  H01F10/02

    CPC classification number: H01F10/187 ,  G11C13/06 ,  H01F10/10 ,  Y10S428/90

    Abstract: There is disclosed a ferromagnetic article of manufacture comprising a crystalline EuO film disposed on a substrate such as glass and quartz. The film is doped with a metal selected from Fe, Co, Ni and Cr. The doped film has an increased Curie temperature of about 180* K., its optical absorption peak occurs at about 5,800 A. and has a sharply increased absorption coefficient of about 2.4 X 105/cm. The article also has a highmagneto-optic Faraday rotation at higher temperatures. Fabrication of the article is by the simultaneous vacuum evaporation of Eu, Eu2O3 and an inner transition metal.

    Abstract translation: 公开了一种铁磁制品，其包括设置在诸如玻璃和石英的基底上的结晶EuO膜。 该膜用选自Fe，Co，Ni和Cr的金属掺杂。 掺杂的膜具有约180°K的居里温度增加，其光吸收峰发生在约5800A，并且具有大约2.4×10 5 / cm的急剧增加的吸收系数。 该文章还在较高温度下具有高磁光法拉第旋转。

    Apparatus for erasing typewriter tape
    3.
    发明授权
    Apparatus for erasing typewriter tape 失效
    用于擦除TYPEWRITER胶带的装置

    公开(公告)号：US3625334A

    公开(公告)日：1971-12-07

    申请号：US3625334D

    申请日：1969-01-15

    Applicant: IBM

    Inventor： AHN KIE Y

    IPC: B41J35/00 ,  B41J31/14 ,  B41J27/00 ,  B41J29/16

    CPC classification number: B41J35/00

    Abstract: A tape having a smooth surface upon which a low melting point ink has been flowed, has ink reflowed over those portions which have been struck by typewriter keys. To effect a redistribution of the ink on the tape, heat is imparted locally thereto, such heat being applied to the typewriter tape either by conduction or radiation. Alternatively, the ink may be caused to flow freely at ambient temperatures and then be permitted to dry to a film thickness.

    BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
    4.
    发明授权
    BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT 失效
    欧洲氧化物，欧洲硫酸盐或欧洲三氧化二铁的耐腐蚀剂，具有三次过渡或VA元素

    公开(公告)号：US3656029A

    公开(公告)日：1972-04-11

    申请号：US3656029D

    申请日：1970-12-31

    Applicant: IBM

    Inventor： AHN KIE Y ,  PARK KYU C

    IPC: H01L45/00 ,  H01L3/16 ,  H01L3/22

    CPC classification number: H01L45/04 ,  H01L45/145 ,  Y10S438/90

    Abstract: This disclosure provides a bistable resistor and materials therefor. The bistable resistor has base electrode, intermediate layer and counter electrode. Illustratively, intermediate layer includes a rare earth chalcogenide, e.g., EuO or EuS, doped with a percentage by weight of either a group VA element, e.g., Bi, or a first row transition element, e.g., Cr. Further, the practice of the invention includes having the host intermediate layer comprised of a combination of a plurality of different rare earth chalcogenides, and having a dopant configuration which includes a combination of a plurality of the individually suitable dopants.

    Abstract translation: 本公开提供了双稳态电阻器及其材料。 双稳电阻器具有基极，中间层和对电极。 示例性地，中间层包括稀土族硫族化物，例如掺杂有VA族元素例如Bi或第一行过渡元素例如Cr的重量百分比的EuO或EuS。 此外，本发明的实践包括使主体中间层由多种不同的稀土硫族化物的组合组成，并且具有包括多个单独合适的掺杂剂的组合的掺杂剂构型。

    Fabrication mask using divalent rare earth element
    6.
    发明授权
    Fabrication mask using divalent rare earth element 失效
    使用二价稀土元素的制作掩模

    公开(公告)号：US3895147A

    公开(公告)日：1975-07-15

    申请号：US21225871

    申请日：1971-12-27

    Applicant: IBM

    Inventor： AHN KIE Y ,  LAMING FRANK P

    IPC: H01L21/027 ,  C23F1/00 ,  G03F1/54 ,  G02B5/20

    CPC classification number: G03F1/54 ,  Y10T428/20 ,  Y10T428/22 ,  Y10T428/24479 ,  Y10T428/24802

    Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth elements capable of existing in the divalent state (Eu2 , Sm2 , Yb2 ) are combined with group VI elements (O, S, Se, Te) to provide the masking material. Trivalent rare earth elements, such as Eu3 , are also suitable if proper dopants are present. An example is Eu2O3 doped with Fe2O3. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image definition during use.

    Abstract translation: 用于制造半导体和各种小部件的面具。 能够以二价态存在的稀土元素（Eu2 +，Sm2 +，Yb2 +）与VI族元素（O，S，Se，Te）组合以提供掩蔽材料。 如果存在适当的掺杂剂，则三价稀土元素如Eu 3+也是合适的。 一个例子是掺杂有Fe2O3的Eu2O3。 该掩模材料比正在制造的组件更硬，并且对于在光致抗蚀剂技术中使用的波长是不透明的，同时对宽的厚度范围内的可见波长是透明的。 掩模可以包括在衬底上的图案化层或具有不同厚度的区域的图案化块状晶体。 基体如钠钙玻璃，蓝宝石，石英等都是合适的。 掩模材料可以沉积成具有良好均匀性和良好光学性能的大面积膜。 该材料易于蚀刻，但不受光致抗蚀剂加工中使用的材料的侵蚀。 其反射率非常低，从而在使用过程中提供了方便的对准和良好的图像定义。

    Method and apparatus for inducing uniaxial anisotropy in magnetic film thereby,and memory using the film
    7.
    发明授权
    Method and apparatus for inducing uniaxial anisotropy in magnetic film thereby,and memory using the film 失效
    用于在磁膜中诱导单相异相的方法和装置，以及使用电影的记忆

    公开(公告)号：US3573981A

    公开(公告)日：1971-04-06

    申请号：US3573981D

    申请日：1967-12-14

    Applicant: IBM

    Inventor： AHN KIE Y ,  VIGGIANO JOSEPH M

    IPC: H01F41/14 ,  C23C14/24 ,  G11B5/85 ,  H01F41/20 ,  C23C13/02 ,  C23C13/04

    CPC classification number: C23C14/24 ,  H01F41/20

    Abstract: THIS DISCLOSURE PROVIDES A MAGNETIC FILM WITH INDUCED UNIAXIAL ANISOTROPY, I.E., A FILM WITH AN EASY AXIS AND A HARD AXIS FOR MAGNETIZATION. THE PRACTIC OF THE DISCLOSURE INCLUDES DEPOSITION OF PARTIALLY IONIZED COMPONENTS OF A MAGNETIC MATERIAL ONTO A HEATED SUBSTRATE IN THE PRESENCE OF AN APPLIED ELECTRIC FIELD ADJACENT TO AND CONTIGUOUS WITH THE SURFACE OF THE SUBSTRATE. THE EASY AXIS OF THE INDUCED UNIAXIALY ANISTROPY IN THE DEPOSITED MAGNETIC FILM IS IN THE DIRECTION OF THE APPLIED ELECTRIC FIELD IN THE FILM. THE MAGNITUCES OF THE TEMPERATURE OF THE SURFACE OF THE SUBSTRATE AND OF THE ELECTRIC FIELD CONTROL BOTH THE MAGNITUDE AND DIRECTION OF THE UNIAXIAL ANISOTROPY IN THE FILM. THE DEGREE OF IONIZATION OF THE COMPONENTS OF THE FILM DURING VAPOR TRANSPORT TO THE SURFACE OF THE SUBSTRATE ESTABLISHES ANOTHER CONTROL OF THE RESULTANT INDUCED UNIAXIAL ANISTROPY IN THE FILM. EXEMPLARY MAGNETIC FILMS FOR THE PRACTICE OF THIS DISCLOSURE ARE NI-FE OF 81/19 RATIO OF THE ATOMIC COMPONENTS NI AND FE AND FILMS OF RARE EARTH COMPOUNDS AND ALLOYS, E.G., EUO COMPOUND AND EU-GD ALLOYS.

    10.
    发明专利
    未知

    公开(公告)号：FR2308176A1

    公开(公告)日：1976-11-12

    申请号：FR7605146

    申请日：1976-02-17

    Applicant: IBM

    Inventor： AHN KIE Y ,  BAJOREK CHRISTOPHER H ,  ROSENBERG ROBERT ,  TU KING N

    IPC: G11B5/66 ,  C01G49/02 ,  C23C14/08 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  H01F10/18 ,  H01F10/20 ,  H01F41/14 ,  H01F41/18 ,  H01F41/28 ,  H01F1/10

    Abstract: A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of polycrystals. A ferrite such as magnetite (Fe3O4) is sputtered from a target onto the first thin film forming a mixture of gamma Fe2O3 and Fe3O4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200 DEG C for both steps when sputtering or evaporation is employed.

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