公开(公告)号：EP1620891A4

公开(公告)日：2007-03-28

申请号：EP04707026

申请日：2004-01-30

Applicant: IBM

Inventor： RAINEY BETH ANN ,  NOWAK EDWARD J ,  ALLER INGO DR ,  KEINERT JOACHIM ,  LUDWIG THOMAS

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/66795

Abstract: The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.

公开(公告)号：WO2004100290A3

公开(公告)日：2005-02-24

申请号：PCT/US2004002647

申请日：2004-01-30

Applicant: IBM ,  RAINEY BETH ANN ,  NOWAK EDWARD J ,  ALLER INGO DR ,  KEINERT JOACHIM ,  LUDWIG THOMAS

Inventor： RAINEY BETH ANN ,  NOWAK EDWARD J ,  ALLER INGO DR ,  KEINERT JOACHIM ,  LUDWIG THOMAS

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/772

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/66795

Abstract: The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.

Abstract translation: 本发明提供一种具有第一鳍片和第二鳍片的FinFET器件。 每个散热片具有从沟道区延伸的沟道区和源极和漏极区。 翅片具有不同的高度。 本发明具有邻近散热片定位的栅极导体。 栅极导体垂直于翅片延伸并与第一鳍片和第二鳍片中的每一个的沟道区域交叉。 翅片彼此平行。 第一翅片的高度与第二翅片的高度的比率为1/2/3的比例。 该比率用于调整晶体管的性能并确定晶体管的总通道宽度。

公开(公告)号：DE602004015592D1

公开(公告)日：2008-09-18

申请号：DE602004015592

申请日：2004-01-30

Applicant: IBM

Inventor： RAINEY BETH ANN ,  NOWAK EDWARD J ,  ALLER INGO DR ,  KEINERT JOACHIM ,  LUDWIG THOMAS

IPC: H01L21/336 ,  H01L21/84 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

Abstract: The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.