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    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate
    3.
    发明专利
    Forming narrow line width patterns by electron beam irradiation - using surface migratable resist and pref. non-back-scattering substrate 未知

    公开(公告)号：DE2935615A1

    公开(公告)日：1980-08-21

    申请号：DE2935615

    申请日：1979-09-04

    Applicant: IBM

    Inventor： BROERS ALEC NIGEL ,  CUOMO JEROME JOHN ,  LAIBOWITZ ROBERT BENJAMIN ,  MOLZEN JUN WALTER WILLIAM

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/312 ,  H05K3/10

    Abstract: In formation of patterns by electron beam irradiation of resist, the resist is a surface migratable resist provided in thickness less than thickness required for pattern formation. Pref. the resist is formed on a thin film substrate supported by a non-electron backscattering substrate. The resist is exposed to a focussed electron beam to convert and fix the resist until the required pattern thickness is reached. Exposure duration control is esp. achieved by monitoring electron scattering by the converted and fixed resist. The nonelectron backscattering substrate is pref. Si, Si3N4, SiO2, Al2O3, polyimide, collodion or C. The resist is organic material, esp. silicone oil or tetraphenyl-tegramethyl-trisiloxane. Pattern line widths 100A can be formed as method avoids raggedness at the edges and provides control of pattern thickness and width. The resist pattern is useful in electrical contact control and light modulation, and may be used in situ, or may be used to transfer the pattern to another substrate for device formation using 20-50A X-ray irradiation.

    4.
    发明专利
    未知

    公开(公告)号：IT1150002B

    公开(公告)日：1986-12-10

    申请号：IT1921980

    申请日：1980-01-16

    Applicant: IBM

    Inventor： BROERS ALEC NIGEL

    IPC: H01J37/06 ,  H01J37/04 ,  H01J37/28 ,  H01J37/305 ,  H01L21/027

    Abstract: A high brightness electron probe beam is formed by generating an electron beam with an electron gun operated in a high current emission configuration, selecting the region of the cross-over having the highest brightness and then limiting contributions to the final beam of a demagnification column to electrons originating only from this region of the cross-over.

    7.
    发明专利
    未知

    公开(公告)号：DE2332091A1

    公开(公告)日：1974-01-03

    申请号：DE2332091

    申请日：1973-07-23

    Applicant: IBM

    Inventor： BROERS ALEC NIGEL ,  HERITAGE MARCUS BARRY

    IPC: H01J37/147 ,  H01J37/21 ,  H01J37/30 ,  H01J3/32

    Abstract: 1416077 Electron-beam apparatus INTERNATIONAL BUSINESS MACHINES CORP 28 March 1973 [30 June 1972] 14834/73 Heading H1D In electron beam apparatus in which an electron beam is scanned by deflection coils 34, 36 over a projection mask 40 on to a workpiece 48-e.g. a semiconductor wafer for microcircuit fabrication-accurate registration of the mask 40 and the workpiece is ensured by a preliminary operation in which the beam is scanned only over a first registration mark formed in the mask 40 and thereafter impacts a second registration mark formed in the workpiece 48, and the system is adjusted to produce superimposition of the first mark on the second mark (Fig. 2, not shown). Superimposition is observed by collecting back-scattered electrons from the workpiece and displaying the resulting signal on a video display 52 which is scanned in synchronism with the coils 34, 36.

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