公开(公告)号：JP2005084682A

公开(公告)日：2005-03-31

申请号：JP2004255261

申请日：2004-09-02

Applicant: Ibm ,  Schott Ag ,  アイビーエムIbm ,  ショット アーゲーSchott AG

Inventor： SCHMIDT FRANK ,  SOBEL FRANK ,  HESS GUENTER ,  BECKER HANS ,  GOETZBERGER OLIVER ,  RENNO MARKUS ,  CHEY S JAY ,  BUTTGEREIT UTE

IPC: G03F1/08 ,  C23C14/10 ,  C23C14/14 ,  C23C14/34 ,  C23C14/46 ,  G03F1/00 ,  H01L21/027

CPC classification number: C23C14/3442 ,  C23C14/10 ,  C23C14/14 ,  C23C14/46 ,  G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide an attenuating phase shift mask blank to be used in lithography and to provide a method for manufacturing the mask blank.
SOLUTION: The attenuating phase shift mask comprises a substrate and a thin film system applied on one surface of the substrate. The thin film system includes a phase shift layer comprising a phase shift control upper layer and a transmission control upper layer. The phase shift mask is capable of producing a photomask having almost 180° phase shift and at least 0.001% transmission for exposure light at ≤200 nm wavelength. The thin film system is essentially free from defects having ≥0.5 μm particle size.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于光刻中的衰减相移掩模毛坯，并提供一种制造掩模毛坯的方法。 解决方案：衰减相移掩模包括施加在衬底的一个表面上的衬底和薄膜系统。 薄膜系统包括相移层，包括相移控制上层和透射控制上层。 相移掩模能够产生对于≤200nm波长的曝光光具有几乎180°相移和至少0.001％透射率的光掩模。 薄膜系统基本上没有≥0.5μm粒度的缺陷。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：EP1497699A4

公开(公告)日：2008-07-09

申请号：EP03716998

申请日：2003-04-07

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  CHEY S JAY ,  HIBBS MICHAEL STRAIGHT ,  LANG ROBERT N ,  MAHOROWALA ARPAN PRAVIN ,  RACETTE KENNETH CHRISTOPHER

IPC: G03F1/32 ,  C23C14/06 ,  C23C14/08 ,  H01L21/027 ,  G03F9/00 ,  C23C14/00 ,  C23C14/32 ,  G03C5/00 ,  G03F1/08

CPC classification number: G03F1/32 ,  C23C14/0676 ,  C23C14/08

Abstract: An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of optical transmission (0.001 % up to 15 % at 157 nm) is obtained by this process.

公开(公告)号：JP2005084684A

公开(公告)日：2005-03-31

申请号：JP2004256134

申请日：2004-09-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BECKER HANS ,  BUTTGEREIT UTE ,  HESS GUNTER ,  GOETZBERGER OLIVER ,  SCHMIDT FRANK ,  SOBEL FRANK ,  RENNO MARKUS ,  CHEY S JAY

IPC: G03F1/08 ,  C23C14/10 ,  C23C14/14 ,  C23C14/34 ,  C23C14/46 ,  G03F1/00 ,  H01L21/027

CPC classification number: C23C14/3442 ,  C23C14/10 ,  C23C14/14 ,  C23C14/46 ,  G03F1/32

Abstract: PROBLEM TO BE SOLVED: To provide an attenuating phase deviation mask blank to be used in lithography and to provide a method for manufacturing the mask blank.
SOLUTION: The attenuating phase deviation mask comprises a substrate and a thin film system applied on one surface of the substrate and is to be used in lithography. The thin film system includes a phase deviation layer having a phase deviation control sublayer and a transmission control sublayer. The phase deviation mask is capable of producing a photomask having almost 180° phase deviation and at least 0.001% transmission for exposure at ≤200 nm wavelength. The thin film system essentially is free from defects having ≥0.5 μm particle size.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于光刻中的衰减相位掩模毛坯，并提供一种制造掩模毛坯的方法。 解决方案：衰减相位偏移掩模包括施加在基板的一个表面上并用于光刻中的基板和薄膜系统。 薄膜系统包括具有相位偏移控制子层和透射控制子层的相位偏移层。 相位掩模能够产生具有几乎180°相位偏移和至少0.001％透射率的光掩模，用于在≤200nm波长下曝光。 薄膜系统基本上没有≥0.5μm粒度的缺陷。 版权所有（C）2005，JPO＆NCIPI