ATTENUATED EMBEDDED PHASE SHIFT PHOTOMASK BLANKS
    2.
    发明申请
    ATTENUATED EMBEDDED PHASE SHIFT PHOTOMASK BLANKS 审中-公开
    衰减的相移相机空白

    公开(公告)号:WO02069037A2

    公开(公告)日:2002-09-06

    申请号:PCT/GB0200450

    申请日:2002-02-01

    Applicant: IBM IBM UK

    Abstract: An attenuating embedded phase shift photomask blank that produce s a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001 % up to 20 % at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.

    Abstract translation: 使用由金属,硅,氮或金属,硅,氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。 通过该方法获得宽范围的光学透射(0.001nm至高达193nm的20%)。 实现后沉积工艺以获得用于工业中的所需性能(相对于激光照射和酸处理的光学性质的稳定性)。 实现用于溅射靶的特殊制造工艺以降低膜的缺陷。

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