公开(公告)号：WO2008141863A3

公开(公告)日：2009-03-05

申请号：PCT/EP2008054205

申请日：2008-04-08

Applicant: IBM ,  KRAUSE RAINER KLAUS ,  PFEIFFER GERD ,  MUEHGE THORSTEN ,  EICKELMANN HANS-JUERGEN ,  HAAG MICHAEL ,  SCHMIDT MARKUS

Inventor： KRAUSE RAINER KLAUS ,  PFEIFFER GERD ,  MUEHGE THORSTEN ,  EICKELMANN HANS-JUERGEN ,  HAAG MICHAEL ,  SCHMIDT MARKUS

IPC: H01L31/0224 ,  H01L27/142 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/022425 ,  H01L31/0504 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of backside contacting of thin layer photovoltaic cells consisting of Si elements as well as thin film cells, like CIGS, is provided, consisting of the following steps: providing a p-n-junction consisting of a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.

Abstract translation: 提供了由Si元素组成的薄层光伏电池以及诸如CIGS的薄膜电池的背面接触的方法，包括以下步骤：提供由n掺杂的薄Si层和薄的Si层组成的pn结 p掺杂Si层结合在所述n掺杂Si层的顶部; 将所述p-n结键合到玻璃基板上; 在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上制备接触点; 以及在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上产生接触引脚。

公开(公告)号：GB2522408A

公开(公告)日：2015-07-29

申请号：GB201400531

申请日：2014-01-14

Applicant: IBM

Inventor： SCHMIDT MARKUS ,  EICKELMANN HANS-JUERGEN ,  KUEHL HARTMUT ,  KELLMANN RUEDIGER ,  BREDEL HERBERT

IPC: H01L31/053 ,  H01L27/142 ,  H01L31/04

Abstract: A thin-film monolithically integrated solar module 100a comprising a thin-film solar cell 104, having at least one solar diode, on a transparent substrate 102, a thin-film energy storage device 106, and an electronic controller 108 comprising at least one thin-film transistor 110 above the thin-film energy storage device 106, wherein the electronic controller 108 is electrically connected to the thin-film solar cell 104 and the thin-film energy storage device 106 by vias 148. The thin-film solar cell 104 may comprise a transparent front-side electrode 120, a photovoltaic layer 122 and a back-side electrode 124. The module may also comprise a first dielectric layer 128. The energy storage device 106 may comprise a lower electrode 130, an active energy storage layer 132, and an upper electrode 134. Also disclosed is a method for manufacturing the above described device.

公开(公告)号：BRPI0905925A2

公开(公告)日：2015-06-23

申请号：BRPI0905925

申请日：2009-01-13

Applicant: IBM

Inventor： KRAUSE RAINER KLAUS ,  PFEIFFER GERD ,  EICKELMANN HANS-JUERGEN ,  MUEHGE THORSTEN

IPC: H01L31/18 ,  H01L31/05

公开(公告)号：GB2516011A

公开(公告)日：2015-01-14

申请号：GB201311815

申请日：2013-07-02

Applicant: IBM

Inventor： SCHMIDT MARKUS ,  EICKELMANN HANS-JUERGEN ,  KELLMANN RUEDIGER ,  KUEHL HARTMUT ,  HOVEL HAROLD JOHN ,  STEEN STEVEN ERIK

IPC: H01L31/052 ,  H01L31/0232

Abstract: The invention relates to concentrated photovoltaics for thin film solar cell devices. The thin film solar cell device 100 comprises a substrate 10 with one or more thin film radiation absorbers 12 and a cover 20 which covers the substrate and the absorbers. Mounted to this is an integrated optical system 14, comprising at least one optical element 16 used for concentrating the light onto the solar cell. The optical element 16 and the corresponding radiation absorbers 12 are aligned with respect to their optical axis 24, such that an incoming radiation 22 is directed onto the radiation absorber 12 by the optical system 14. The device can have a second optical system 18 which is arranged between the first optical element and the radiation absorbers. The first optical system may be integrated at a top surface of the cover medium, and can comprise of a lens array, whilst the second optical system can comprise a light guide. The second optical element can be integrated with the top of the radiation absorbing device.

公开(公告)号：MX2010008377A

公开(公告)日：2010-08-18

申请号：MX2010008377

申请日：2009-01-13

Applicant: IBM

Inventor： KRAUSE RAINER KLAUS ,  PFEIFFER GERD ,  EICKELMANN HANS-JUERGEN ,  MUEHGE THORSTEN

IPC: H01L31/18 ,  H01L31/05

Abstract: La invención se refiere a un método para fabricar una celda solar de silicio, el método comprende:- proporcionar una placa portadora (100), - aplicar un primer patrón de contactos a la placa portadora (100), el primer patrón de contactos comprende un juego de primeros contactos laminares (104),- aplicar una multitud de rebanadas de silicio (108) al primer patrón de contactos, en donde cada primer contacto laminar del conjunto o juego de primeros contactos laminares (104) está en contacto laminar espacial máximo con dos rebanadas de silicio (108), - aplicar un segundo patrón de contactos a la multitud de rebanadas de silicio (108), en donde el segundo patrón de contactos comprende un juego o conjunto de segundos contactos laminares (200), en donde cada segundo contacto laminar del juego de segundos contactos laminares (200) está en contacto laminar espacial máximo con dos rebanadas de silicio (108).