公开(公告)号：WO2005031810A3

公开(公告)日：2005-06-23

申请号：PCT/US2004029378

申请日：2004-09-10

Applicant: IBM ,  BEDELL STEPHEN W ,  CHOE KWANG SU ,  FOGEL KEITH F ,  SADANA DEVENDRA K

Inventor： BEDELL STEPHEN W ,  CHOE KWANG SU ,  FOGEL KEITH F ,  SADANA DEVENDRA K

IPC: C22F1/10 ,  H01L21/20 ,  H01L21/762

CPC classification number: H01L21/76227 ,  C22F1/10 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/76245 ,  H01L29/78603

Abstract: A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.

Abstract translation: 提供一种形成依赖于在含Ge层下形成的多孔硅层（或区域）的氧化的绝缘体上硅的简单且直接的方法。 该方法包括以下步骤：提供包括其中形成有富空穴的含Si衬底和含Si衬底顶部的含Ge层的结构; 将富含孔的区域转化为多孔区域; 并退火包括多孔区域的结构，以提供基本上松弛的绝缘体上的SiGe。

公开(公告)号：DE602004007940T2

公开(公告)日：2008-04-24

申请号：DE602004007940

申请日：2004-09-10

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  CHOE KWANG SU ,  FOGEL KEITH F ,  SADANA DEVENDRA K

IPC: H01L21/00 ,  C22F1/10 ,  H01L21/20 ,  H01L21/762

Abstract: A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.

公开(公告)号：DE602004007940D1

公开(公告)日：2007-09-13

申请号：DE602004007940

申请日：2004-09-10

Applicant: IBM

Inventor： BEDELL STEPHEN W ,  CHOE KWANG SU ,  FOGEL KEITH F ,  SADANA DEVENDRA K

IPC: H01L21/00 ,  C22F1/10 ,  H01L21/20 ,  H01L21/762

Abstract: A simple and direct method of forming a SiGe-on-insulator that relies on the oxidation of a porous silicon layer (or region) that is created beneath a Ge-containing layer is provided. The method includes the steps of providing a structure comprising a Si-containing substrate having a hole-rich region formed therein and a Ge-containing layer atop the Si-containing substrate; converting the hole-rich region into a porous region; and annealing the structure including the porous region to provide a substantially relaxed SiGe-on-insulator material.