公开(公告)号：CA1218553A

公开(公告)日：1987-03-03

申请号：CA501729

申请日：1986-02-12

Applicant: IBM

Inventor： GRECO STEPHEN E ,  GREEN DENNIS C

IPC: C08F12/00 ,  C08F12/34 ,  G03F7/023 ,  G03F7/028 ,  G03F7/038 ,  H01L21/027 ,  G03C1/71

Abstract: A film forming, radiation sensitive resist composition having improved thermal stability and a reduced dissolution rate in developer solutions, comprised of a sensitizer and a polyalkenyl phenol such as a polyvinyl phenol cross-linked, prior to irradiation, with a polyfunctional cross-linking agent such as dimethylol pcresol or hexamethylene tetramine.

公开(公告)号：CA1027963A

公开(公告)日：1978-03-14

申请号：CA182854

申请日：1973-10-09

Applicant: IBM

Inventor： GREEN DENNIS C ,  YOUNG WILLIAM R

IPC: C07C37/00 ,  C07C49/825 ,  C09K19/20 ,  G02F1/13

公开(公告)号：CA1107289A

公开(公告)日：1981-08-18

申请号：CA285336

申请日：1977-08-23

Applicant: IBM

Inventor： GREEN DENNIS C

IPC: C09K3/16 ,  C07D339/06 ,  C07D345/00 ,  H01B1/12 ,  H01G9/02 ,  H01G9/028 ,  H01M6/18 ,  C07D409/04 ,  C07D421/04

Abstract: of the Invention Substituted derivatives of tetrathiafulvalene, tetraselenafulvalene and dithiadiselenafulvalene having the general formulae AND/OR where Z is S and Y is S; Z is S and Y is Se; and Z is Se and Y is Se, and R can be CO2H, R'R"COH, R'CHOH, COR', SCH3, SO?LI+ , SnR?, SiR3, -CH2OH -CO2R', R'CHOH, CHO, CR? CR?OH, TTF, TSeF and DTDSeF, R' and R" can be the same or different and is selected from the group consisting of alkyls, aryls, alkaryls, ether substituted alkyls, halogen substituted alkyls and halogens, are prepared. A novel method for their preparation is also described.

公开(公告)号：CA1100395A

公开(公告)日：1981-05-05

申请号：CA321797

申请日：1979-02-19

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  GREEN DENNIS C ,  KAUFMAN FRANK B ,  REISMAN ARNOLD

IPC: C23F1/10 ,  H01L21/306 ,  H01L21/308 ,  C03C15/00 ,  C09K13/00

Abstract: METHOD OF CONTROLLING SILICON WAFER ETCHING RATES A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed. Y0977-055