公开(公告)号：JPS62102545A

公开(公告)日：1987-05-13

申请号：JP22637886

申请日：1986-09-26

Applicant: IBM

Inventor： CHOW MING-FEA ,  GUTHRIE WILLIAM LISLIE ,  KAUFMAN FRANK B

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46

公开(公告)号：DE3687409T2

公开(公告)日：1993-07-15

申请号：DE3687409

申请日：1986-10-21

Applicant: IBM

Inventor： CHOW MING-FEA ,  GUTHRIE WILLIAM LISLIE ,  KAUFMAN FRANK B

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  H01L21/90

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, in particular for electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric mate­rial is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric mate­rial, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric mate­rial becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

公开(公告)号：CA1175990A

公开(公告)日：1984-10-09

申请号：CA358894

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  SHAW JANE M ,  HOFER DONALD C

IPC: G03C1/00 ,  G03C5/16 ,  G03F7/26

Abstract: A new class of phot resists is described. The resists are donor polymer-doped halcarbon acceptor transfer complexes. They are prepared from know polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(.alpha.halophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：CA1163671A

公开(公告)日：1984-03-13

申请号：CA358901

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C

IPC: G03D7/00

Abstract: A new class of E-beam resists is described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(ahalophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：CA2011709C

公开(公告)日：1993-12-21

申请号：CA2011709

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY W ,  DAVID LAWRENCE D ,  GUTHRIE WILLIAM L ,  KAUFMAN FRANK B ,  PATRICK WILLIAM J ,  RODBELL KENNETH P

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  C23F1/44 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：DE3687409D1

公开(公告)日：1993-02-11

申请号：DE3687409

申请日：1986-10-21

Applicant: IBM

Inventor： CHOW MING-FEA ,  GUTHRIE WILLIAM LISLIE ,  KAUFMAN FRANK B

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  H01L21/90

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, in particular for electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric mate­rial is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric mate­rial, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric mate­rial becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

公开(公告)号：AU539640B2

公开(公告)日：1984-10-11

申请号：AU6298380

申请日：1980-10-06

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD C ,  KAUFMAN FRANK B ,  KRAMER STEVEN ROBERT

IPC: G03F7/004 ,  G03C1/675 ,  G03C5/00 ,  G03C5/16 ,  G03F7/038 ,  H01L21/027 ,  H01L21/302 ,  G03C1/727

公开(公告)号：CA1161685A

公开(公告)日：1984-02-07

申请号：CA358898

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD C ,  KAUFMAN FRANK B ,  KRAMER STEVEN R

IPC: G03F7/004 ,  G03C1/675 ,  G03C5/00 ,  G03C5/16 ,  G03F7/038 ,  H01L21/027 ,  H01L21/302 ,  G03C1/495

Abstract: new class of X-ray resists are described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloride, polyepichlorohydrin, poly(.alpha.halophosphazenes), polyacrylic chloride, polystyrene and the like, and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：AU539639B2

公开(公告)日：1984-10-11

申请号：AU6298180

申请日：1980-10-06

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C ,  JONES FLETCHER

IPC: G03D7/00 ,  G03C1/727

公开(公告)号：FR2393388A1

公开(公告)日：1978-12-29

申请号：FR7813283

申请日：1978-04-27

Applicant: IBM

Inventor： ENGLER EDWARD M ,  KAUFMAN FRANK B

IPC: C09B69/10 ,  C09K9/02 ,  G02F1/15 ,  C09K9/00 ,  G02F1/153 ,  G02F1/17 ,  G09F9/30 ,  G09X ,  C09B57/00

Abstract: This invention is concerned with a reversible electrochromic display device wherein its electrochromic activity is derived from an electrochromic active molecules which are attached to a porous polymeric resin.