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    MULTILAYER MAGNETORESISTIVE SENSOR
    3.
    发明专利
    MULTILAYER MAGNETORESISTIVE SENSOR 未知

    公开(公告)号：CA2134711A1

    公开(公告)日：1995-06-24

    申请号：CA2134711

    申请日：1994-10-31

    Applicant: IBM

    Inventor： COFFEY KEVIN R ,  FONTANA ROBERT E ,  HOWARD JAMES K ,  HYLTON TODD L ,  PARKER MICHAEL A ,  TSANG CHING H

    IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  G11B5/00 ,  G01D5/16 ,  G01N27/72

    Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistivesensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers offerromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    4.
    发明专利
    未知

    公开(公告)号：BR9405159A

    公开(公告)日：1995-08-01

    申请号：BR9405159

    申请日：1994-12-20

    Applicant: IBM

    Inventor： COFFEY KEVIN R ,  FONTANA ROBERT E ,  HOWARD JAMES K ,  HYLTON TODD L ,  PARKER MICHAEL A ,  TSANG CHING H

    IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10

    Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    INTERMETALLIC LAYERS IN THIN FILMS FOR IMPROVED ELECTROMIGRATION RESISTANCE
    5.
    发明专利
    INTERMETALLIC LAYERS IN THIN FILMS FOR IMPROVED ELECTROMIGRATION RESISTANCE 未知

    公开(公告)号：CA1056511A

    公开(公告)日：1979-06-12

    申请号：CA263822

    申请日：1976-10-20

    Applicant: IBM

    Inventor： HOWARD JAMES K ,  HO PAUL S

    IPC: G11C11/14 ,  A01K1/01 ,  B41J2/335 ,  C22C21/00 ,  C23C14/00 ,  C23C14/16 ,  C23C14/58 ,  G11B5/31 ,  H01B1/02 ,  H01F10/06 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H05K1/09 ,  H05K3/02

    Abstract: INTERMETALLIC LAYERS IN THIN FILMS FOR IMPROVED ELECTROMIGRATION RESISTANCE A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree.C and 525.degree.C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6x10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

    MAGNETIC RECORDING MEDIA WITH AN UNDERLAYER AND A COBALT-BASED MAGNETIC LAYER
    8.
    发明专利
    MAGNETIC RECORDING MEDIA WITH AN UNDERLAYER AND A COBALT-BASED MAGNETIC LAYER 未知

    公开(公告)号：CA1269894A

    公开(公告)日：1990-06-05

    申请号：CA532014

    申请日：1987-03-13

    Applicant: IBM

    Inventor： AHLERT RICHARD H ,  HOWARD JAMES K ,  LIM GRACE S

    IPC: G11B5/66 ,  G11B5/64 ,  G11B5/73 ,  G11B5/738 ,  G11B5/82 ,  G11B5/62 ,  H01F41/14 ,  H01F10/16

    Abstract: An improved cobalt-platinum (CoPt) thin film metal alloy media for horizontal magnetic recording has a coercivity substantially greater than prior CoPt thin film metal alloy media. A tungsten underlayer between the substrate and the CoPt magnetic layer improves the coercivity above that of media with conventional underlayers, such as chromium. The coercivity of the CoPt layer can be increased even further if the CoPt film is deposited in such a manner as to form an intermetallic compound of Co3W in the interface region between the tungsten underlayer and the CoPt magnetic layer. The tungsten underlayer also improves the magnetic properties of the media when the magnetic layer is an alloy of cobalt-platinum-chromium (CoPtCr).

    ULTRA-THIN FILM CAPACITOR AND METHOD FOR MANUFACTURE THEREOF
    9.
    发明专利
    ULTRA-THIN FILM CAPACITOR AND METHOD FOR MANUFACTURE THEREOF 未知

    公开(公告)号：CA1159918A

    公开(公告)日：1984-01-03

    申请号：CA358899

    申请日：1980-08-25

    Applicant: IBM

    Inventor： BHATTACHARYYA ARUP ,  CHU WEI-KAN ,  HOWARD JAMES K ,  WIEDMAN FRANCIS W

    IPC: H01G4/33 ,  H01G4/10 ,  H01G4/08

    Abstract: ULTRA-THIN FILM CAPACITOR AND METHOD FOR MANUFACTURE THEREOF A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film. FI 9-79-058

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