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    OPTIMIZED ANNULAR COPPER TSV
    4.
    发明申请
    OPTIMIZED ANNULAR COPPER TSV 审中-公开
    优化的环形铜片TSV

    公开(公告)号：WO2012177585A3

    公开(公告)日：2013-04-25

    申请号：PCT/US2012043052

    申请日：2012-06-19

    Applicant: IBM ,  ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

    Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

    IPC: H01L21/28 ,  H01L21/768

    CPC classification number: H01L21/76846 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    Abstract translation: 本公开提供了热机械可靠的铜TSV和在BEOL处理期间形成这种TSV的技术。 TSV构成延伸穿过半导体衬底的环形沟槽。 衬底限定沟槽的内侧壁和外侧壁，该侧壁分隔5至10微米的距离。 包括铜或铜合金的导电路径从所述第一介电层的上表面通过所述衬底在所述沟槽内延伸。 基板厚度可以为60微米或更小。 具有导电连接到导电路径的互连金属化的电介质层直接形成在所述环形沟槽上。

    Optimized annular copper TSV
    5.
    发明专利
    Optimized annular copper TSV 未知

    公开(公告)号：GB2505576B

    公开(公告)日：2016-03-23

    申请号：GB201318982

    申请日：2012-06-19

    Applicant: IBM

    Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

    IPC: H01L23/48 ,  H01L21/28 ,  H01L21/768

    Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    Semiconductor device having a copper plug
    6.
    发明专利
    Semiconductor device having a copper plug 未知

    公开(公告)号：GB2486357B

    公开(公告)日：2015-05-27

    申请号：GB201202913

    申请日：2010-08-23

    Applicant: IBM

    Inventor： FAROOQ MUKTA G ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

    IPC: H01L23/532

    Abstract: Disclosed is a semiconductor device wherein an insulation layer has a via opening with an aluminum layer in the via opening and in contact with the last wiring layer of the device. There is a barrier layer on the aluminum layer followed by a copper plug which fills the via opening. Also disclosed is a process for making the semiconductor device.

    Leakage measurement of through silicon vias
    7.
    发明专利
    Leakage measurement of through silicon vias 未知

    公开(公告)号：GB2508122B

    公开(公告)日：2014-10-29

    申请号：GB201404419

    申请日：2012-09-14

    Applicant: IBM

    Inventor： BHOO-VARAGHAN BHAVANA ,  FAROOQ MUKTA G ,  KINSER EMILY R ,  SAROOP SUDESH

    IPC: H01L21/66 ,  H01L23/58

    Abstract: A method of testing a semiconductor substrate having through substrate vias for current leakage which includes: forming a current leakage measurement structure that includes substrate contacts, sensing circuits to sense current leakage from the through substrate vias, the sensing circuits connected to the through substrate vias and to the substrate contacts so that there is a one-to-one correspondence of a substrate contact and sensing circuit to each through substrate via, and a built-in self test (BIST) engine to sense one of the through substrate vias for current leakage. A reference current is applied to the sensing circuits to set a current leakage threshold for the through substrate vias. A through substrate via is selected for sensing for current leakage. The sensing circuit senses the selected through substrate via to determine whether there is current leakage from the selected through substrate via.

    OPTIMIZED ANNULAR COPPER TSV
    8.
    发明专利
    OPTIMIZED ANNULAR COPPER TSV 未知

    公开(公告)号：CA2828498A1

    公开(公告)日：2012-12-27

    申请号：CA2828498

    申请日：2012-06-19

    Applicant: IBM

    Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

    IPC: H01L21/28 ,  H01L21/768

    Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    Optimized annular copper TSV
    9.
    发明专利
    Optimized annular copper TSV 未知

    公开(公告)号：GB2505576A

    公开(公告)日：2014-03-05

    申请号：GB201318982

    申请日：2012-06-19

    Applicant: IBM

    Inventor： ANDRY PAUL S ,  FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KINSER EMILY R ,  TSANG CORNELIA K ,  VOLANT RICHARD P

    IPC: H01L23/48 ,  H01L21/28 ,  H01L21/768

    Abstract: The present disclosure provides a thermo-mechanically reliable copper TSV and a technique to form such TSV during BEOL processing. The TSV constitutes an annular trench which extends through the semiconductor substrate. The substrate defines the inner and outer sidewalls of the trench, which sidewalls are separated by a distance within the range of 5 to 10 microns. A conductive path comprising copper or a copper alloy extends within said trench from an upper surface of said first dielectric layer through said substrate. The substrate thickness can be 60 microns or less. A dielectric layer having interconnect metallization conductively connected to the conductive path is formed directly over said annular trench.

    Halbleitereinheit mit einem Kupferanschluss
    10.
    发明专利
    Halbleitereinheit mit einem Kupferanschluss 未知

    公开(公告)号：DE112010003936T5

    公开(公告)日：2012-08-16

    申请号：DE112010003936

    申请日：2010-08-23

    Applicant: IBM

    Inventor： FAROOQ MUKTA ,  KINSER EMILY R ,  MELVILLE IAN D ,  SEMKOW KRYSTYNA W

    IPC: H01L21/60 ,  H01L23/48 ,  H01L23/52

    Abstract: Es wird eine Halbleitereinheit offenbart, wobei eine Isolierungsschicht einen Kupferanschluss in Kontakt mit der letzten Verdrahtungsschicht der Einheit aufweist. Es kann auch eine Barriereschicht vorhanden sein, die den Kupferanschluss von der Isolierungsschicht trennt. Bei einer weiteren Ausführungsform kann auch eine Aluminiumschicht zwischen der Isolierungsschicht und dem Kupferanschluss vorhanden sein. Ferner wird ein Verfahren zum Herstellen der Halbleitereinheit offenbart.

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