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公开(公告)号:CA1204882A
公开(公告)日:1986-05-20
申请号:CA412957
申请日:1982-10-06
Applicant: IBM
Inventor: BROERS ALEC N , LAIBOWITZ ROBERT B
IPC: G03F1/00 , G03F1/08 , G03F7/095 , G03F7/20 , H01L21/027 , H01L21/30 , H05K3/00 , H05K3/04 , H05K3/06 , H01L27/00 , H01L21/70
Abstract: SUBMICRON CIRCUIT STRUCTURES AND METHOD OF FORMATION Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving reestablishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.
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公开(公告)号:CA1335954C
公开(公告)日:1995-06-20
申请号:CA560149
申请日:1988-02-29
Applicant: IBM
Inventor: CHAUDHARI PRAVEEN , GAMBINO RICHARD J , KOCH ROGER H , LACEY JAMES A , LAIBOWITZ ROBERT B , VIGGIANO JOSEPH M
IPC: C30B1/02 , C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24 , C30B23/02 , C30B25/02
Abstract: Superconducting transition metal oxide films are provided which exhibit very high onsets of superconductivity and superconductivity at temperatures in excess of 40.degree.K. These films are produced by vapor deposition processes using pure metal sources for the metals in the superconducting compositions, where the metals include multi-valent nonmagnetic transition metals, rare earth elements, and/or rare earth-like elements and alkaline earth elements. The substrate is exposed to oxygen during vapor deposition, and, offer formation of the film, ambient followed by at least one annealing step in an oxygen ambient and slow cooling over several hours to room temperature. The substrates chosen are not critical as long as they are not adversely reactive with the superconducting oxide film. Transition metals include Cu, Ni, Ti, and V, while the rare earth-like elements include Y, Sc, and La. The alkaline earth elements include Ca, Ba, and Sr.
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公开(公告)号:CA1312147C
公开(公告)日:1992-12-29
申请号:CA563566
申请日:1988-04-07
Applicant: IBM
Inventor: CLARK GREGORY J , GAMBINO RICHARD J , KOCH ROGER H , LAIBOWITZ ROBERT B , MARWICK ALAN D , UMBACH CORWIN P
IPC: G01R33/035 , H01L39/22 , H01L39/24 , H01L39/14
Abstract: YO987-028 DEVICES USING HIGH Tc SUPERCONDUCTORS AND METHOD FOR MAKING THE SAME A superconducting device operable at temperatures in excess of 30.degree.K and a method for making the device are described. A representative device is an essentially coplanar SQUID device formed in a single layer of high Tc superconducting material, the SQUID device being operable at temperatures in excess of 60.degree.K. High energy beams, for example ion beams, are used to convert selected portions of the high Tc superconductor to nonsuperconducting properties so that the material now has both superconducting regions and nonsuperconducting regions. In this manner a superconducting loop having superconducting weak links can be formed to comprise the SQUID device.
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公开(公告)号:DE68923443T2
公开(公告)日:1996-03-07
申请号:DE68923443
申请日:1989-09-21
Applicant: IBM
Inventor: LAIBOWITZ ROBERT B , UMBACH CORWIN P
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公开(公告)号:DE68923443D1
公开(公告)日:1995-08-17
申请号:DE68923443
申请日:1989-09-21
Applicant: IBM
Inventor: LAIBOWITZ ROBERT B , UMBACH CORWIN P
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公开(公告)号:CA1335955C
公开(公告)日:1995-06-20
申请号:CA595451
申请日:1989-03-31
Applicant: IBM
Inventor: GALLAGHER WILLIAM J , GIESS EDWARD A , GUPTA ARUNAVA , LAIBOWITZ ROBERT B , O'SULLIVAN EUGENE J M , SANDSTROM ROBERT L
IPC: C01G3/00 , C01B13/14 , C01G1/00 , C04B41/89 , C30B23/02 , C30B25/18 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/14 , H01L39/22 , H01L39/24 , H01P3/08 , H01L39/12
Abstract: High Tc oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high Tc superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and T1-based systems.
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公开(公告)号:CA1087241A
公开(公告)日:1980-10-07
申请号:CA185521
申请日:1973-11-09
Applicant: IBM
Inventor: DISTEFANO THOMAS H , LAIBOWITZ ROBERT B , ROSENBERG ROBERT
Abstract: SELF-HEALING ELECTRODE FOR UNIFORM NEGATIVE CORONA The present invention relates to electrodes used for charging electrophotographic image surfaces in copying machines. More particularly, the disclosure is directed to the negative corona discharge electrodes which produce a negative charge that is applied to the photoconductive surface exposed to the corona discharge. In the present invention, the electrode structure includes a combination of a wire of valve metal with a high resistivity coating spread uniformly over the surface of the wire. The valve metal, one example being tantalum, may serve as the electrode wire itself or may surround an inner wire such as stainless steel. By providing an electrode for corona discharge having a uniform high resistive coating, the plasma glow produced will spread uniformly along the length of the wire. By using a valve metal, which form a hard oxide under the high resistivity coating, the electrode is self-healing in that if cracks or imperfections occur in the coating, the exposed valve metal will oxidize and fill in the cracks and imperfections.
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