中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.017 seconds)

    1.
    发明专利
    未知

    公开(公告)号：FR2334278A7

    公开(公告)日：1977-07-01

    申请号：FR7603920

    申请日：1976-02-06

    Applicant: IBM

    Inventor： BAGLIN JOHN E ,  TU KING NING ,  DISTEFANO THOMAS H

    IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01B19/04 ,  H05K3/22

    Abstract: 1519695 Densifying glass INTERNATIONAL BUSINESS MACHINES CORP 5 March 1976 [11 June 1975] 08844/76 Heading C1M [Also in Division H1] The dielectric breakdown strength of a vitreous insulating layer less than 105000 Š thick of an electronic device is increased by irradiating the layer, during or after its formation, with ions of H, He, Ne, Ar, Kr or Xe at a dosage and energy so as to increase the density of the layer by at least 1% without the ions penetrating completely the layer, and then annealing the layer. The vitreous layer may be fused SiO 2 on a substrate of, e.g., silicon. The device 30-1 comprising the vitreous layer may be mounted on plate 30-2 in mounts 30-3. Ions from source 12 are passed through accelerator 14, then through a momentum analyzing magnet 16 and beam scanner plates 18-1, 18-2, 20-1, 20-2, and directed on to the vitreous layer (e.g. at a dosage of 10 13 -10 17 ions/cm 2 .). The annealing, which may be concurrent with the irradiation may be at 200-800‹ C.

    METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A CE INCLUDING ION IMPLANTATION THEREIN
    3.
    发明专利
    METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A CE INCLUDING ION IMPLANTATION THEREIN 未知

    公开(公告)号：CA1038504A

    公开(公告)日：1978-09-12

    申请号：CA247395

    申请日：1976-03-05

    Applicant: IBM

    Inventor： BAGLIN JOHN E ,  DISTEFANO THOMAS H ,  TU KING-NING

    IPC: H01L21/265 ,  C03C23/00 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/316 ,  H01L29/51 ,  H01L21/72

    Abstract: METHOD FOR IMPROVING DIELECTRIC BREAKDOWN STRENGTH OF INSULATING-GLASSY-MATERIAL LAYER OF A DEVICE INCLUDING ION IMPLATATION THEREIN It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO2 thin film, with a subsequent annealing procedure, improves the dielectric breakdown property of the film. The treated SiO2 film is found to be substantially more dense than a comparable untreated SiO2 film. It is theorized for the practice of this disclosure that the physical mechanism which produces the densification of the SiO2 film may be responsible for the enhanced dielectric properties of the film. Such an improved film is especially useful as the gate insulator layer in an insulated-gate electrode field-effect transistor device, and as an insulating layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field effect devices in which the gate insulation is relatively thin, e.g. less than 500.ANG., and in metallic magnetic-bubble devices in which a thin SiO2 layer is used to separate the sense element from the conductive magnetic film.

    GROWTH OF POLYCRYSTALLINE SEMICONDUCTOR FILM WITH INTERMETALLIC NUCLEATING LAYER
    4.
    发明专利
    GROWTH OF POLYCRYSTALLINE SEMICONDUCTOR FILM WITH INTERMETALLIC NUCLEATING LAYER 未知

    公开(公告)号：CA1088677A

    公开(公告)日：1980-10-28

    申请号：CA292874

    申请日：1977-12-12

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  DISTEFANO THOMAS H ,  ROSENBERG ROBERT

    IPC: C23C14/02 ,  C23C16/00 ,  C30B11/12 ,  C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  B01J17/26 ,  H01L21/18

    Abstract: GROWTH OF POLYCRYSTALLINE SEMICONDUCTOR FILM WITH INTERMETALLIC NUCLEATING LAYER A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the elemental semiconductor to form a nucleating layer for the growth of the semiconducting film. The semiconductor is grown from vapor phase by the technique of either vacuum evaporation or chemical vapor deposition, e.g., by decomposition of SiH4. The semiconductor e.g., Si, is initially deposited onto a thin film of a specific metal, e.g., Pt or Ni, on any inert substrate, e.g., SiO2 or Al2O3, which is held at a temperature, e.g., 900.degree.C, above the eutectic point, i.e., 830.degree.C, of an intermetallic compound and the metallic film, and below the eutectic point, i.e., 979.degree.C, of another intermetallic compound and the semiconductor. Deposition of the semiconductor onto the metallic film produces a layer of liquid comprising the semiconductor and metal, which increases in thickness until the metallic layer is completely consumed. Additional deposition of the semiconductor produces a supersaturated liquid from which large crystallites of the intermetallic precipitate. With increasing deposition of semiconductor, the crystallites of intermetallic material continue to grow until they consume all of the metal in the liquid, at which point no liquid remains. Continuing deposition of semiconductor material results in the growth of filamentary crystallites of the semiconductor out of the intermetallic surface. The result is a columnar film of the semiconductor with a filamentary structure originating from the crystallites of intermetallic nucleating material.

    6.
    发明专利
    未知

    公开(公告)号：FR2352364A1

    公开(公告)日：1977-12-16

    申请号：FR7711791

    申请日：1977-04-13

    Applicant: IBM

    Inventor： DISTEFANO THOMAS H

    IPC: H04N5/80 ,  G02B26/02 ,  G02B26/08 ,  G09F9/37 ,  G09G3/34 ,  G09X ,  G11C13/04

    Abstract: The practice of this invention provides display of information which utilizes the inherent characteristic of the displacement by an applied electric field intensity distribution of the interface between two fluid dielectric media which are operationally immiscible in each other and have different total dielectric properties at the interface. In particular, the information handling and display in the practice of this invention are with an optical display device in which the two dielectric media are immiscible liquids, e.g., oil and water. The local displacement of the interface therebetween is accomplished by the local application of an electric field which effects movement of the interface by electrohydrodynamic interaction with the dielectric media at the interface. An embodiment of the invention includes an electrode structure for applying an electric field intensity distribution so that the interface can be displaced locally and selectively and preferentially in accordance with a particular information pattern.

    SELF-HEALING ELECTRODE FOR UNIFORM NEGATIVE CORONA
    8.
    发明专利
    SELF-HEALING ELECTRODE FOR UNIFORM NEGATIVE CORONA 未知

    公开(公告)号：CA1087241A

    公开(公告)日：1980-10-07

    申请号：CA185521

    申请日：1973-11-09

    Applicant: IBM

    Inventor： DISTEFANO THOMAS H ,  LAIBOWITZ ROBERT B ,  ROSENBERG ROBERT

    IPC: G03G15/02 ,  H01T19/00 ,  H05F3/04

    Abstract: SELF-HEALING ELECTRODE FOR UNIFORM NEGATIVE CORONA The present invention relates to electrodes used for charging electrophotographic image surfaces in copying machines. More particularly, the disclosure is directed to the negative corona discharge electrodes which produce a negative charge that is applied to the photoconductive surface exposed to the corona discharge. In the present invention, the electrode structure includes a combination of a wire of valve metal with a high resistivity coating spread uniformly over the surface of the wire. The valve metal, one example being tantalum, may serve as the electrode wire itself or may surround an inner wire such as stainless steel. By providing an electrode for corona discharge having a uniform high resistive coating, the plasma glow produced will spread uniformly along the length of the wire. By using a valve metal, which form a hard oxide under the high resistivity coating, the electrode is self-healing in that if cracks or imperfections occur in the coating, the exposed valve metal will oxidize and fill in the cracks and imperfections.

Patent Agency Ranking