公开(公告)号：JPH1056011A

公开(公告)日：1998-02-24

申请号：JP14680597

申请日：1997-06-04

Applicant: IBM ,  TOSHIBA CORP

Inventor： LICATA THOMAS J ,  OKUMURA KATSUYA

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To improve the mutual connecting characteristics of aluminum by adjusting the insulating film, wherein a smooth insulating layer is formed or attached beforehand, by surface-state conditioning such as flattening, and providing the required smoothness of the surface. SOLUTION: An oxide layer is formed on a silicon substrate. An aluminum- alloy/Ti-layer structure is formed on the surface of each of formed silane oxide, SAUSG, plasma TEOS and HDP oxide. Then, each film of 200Å Ti, then 2,000Å Al-Cu-Si alloy and finally Al-Cu 5,500Å undergo DC magnetron supporting attachment in this sequence. Thus, low film resistivity, higher film flatness and a smoother form of TiAl3 can be achieved as indicated in the table. Furthermore, the same result is also obtained by processing the surface by chemical-mechanical polishing and a two stage oxide etching process.

公开(公告)号：CA2061119C

公开(公告)日：1998-02-03

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： PENNINGTON SCOTT L ,  RYAN JAMES G ,  LICATA THOMAS J ,  LEE PEI-ING P ,  PARRIES PAUL C ,  MCDEVITT THOMAS L ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：CA2061119A1

公开(公告)日：1992-10-20

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：BR9201351A

公开(公告)日：1992-12-01

申请号：BR9201351

申请日：1992-04-13

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.