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公开(公告)号:CA2061119C
公开(公告)日:1998-02-03
申请号:CA2061119
申请日:1992-02-12
Applicant: IBM
Inventor: PENNINGTON SCOTT L , RYAN JAMES G , LICATA THOMAS J , LEE PEI-ING P , PARRIES PAUL C , MCDEVITT THOMAS L , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40 , C23C14/34
Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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公开(公告)号:CA2061119A1
公开(公告)日:1992-10-20
申请号:CA2061119
申请日:1992-02-12
Applicant: IBM
Inventor: LEE PEI-ING P , LICATA THOMAS J , MCDEVITT THOMAS L , PARRIES PAUL C , PENNINGTON SCOTT L , RYAN JAMES G , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40 , C23C14/34
Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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公开(公告)号:BR9201351A
公开(公告)日:1992-12-01
申请号:BR9201351
申请日:1992-04-13
Applicant: IBM
Inventor: LEE PEI-ING P , LICATA THOMAS J , MCDEVITT THOMAS L , PARRIES PAUL C , PENNINGTON SCOTT L , RYAN JAMES G , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40
Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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