公开(公告)号：CA2061119C

公开(公告)日：1998-02-03

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： PENNINGTON SCOTT L ,  RYAN JAMES G ,  LICATA THOMAS J ,  LEE PEI-ING P ,  PARRIES PAUL C ,  MCDEVITT THOMAS L ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：CA2061119A1

公开(公告)日：1992-10-20

申请号：CA2061119

申请日：1992-02-12

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40 ,  C23C14/34

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.

公开(公告)号：CA2039321A1

公开(公告)日：1991-10-31

申请号：CA2039321

申请日：1991-03-28

Applicant: IBM

Inventor： CRONIN JOHN E ,  KAANTA CARTER W ,  LEE PEI-ING P ,  PREVITI-KELLY ROSEMARY A ,  RYAN JAMES G ,  YOON JUNG H

IPC: G03F5/24 ,  G03F7/038 ,  G03F7/26 ,  G03F7/30 ,  H05K1/05

Abstract: BU9-90-013 PROCESS FOR FORMING MULTI-LEVEL COPLANAR CONDUCTOR/INSULATOR FILM EMPLOYING, PHOTOSENSITIVE POLYIMIDE POLYMER COMPOSITIONS of to Disclosure Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate having a conductor pattern. The insulator layers, each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.

公开(公告)号：CA1306072C

公开(公告)日：1992-08-04

申请号：CA556673

申请日：1988-01-15

Applicant: IBM

Inventor： CRONIN JOHN E ,  KAANTA CARTER W ,  LEACH MICHAEL A ,  LEE PEI-ING P ,  PAN PAI-HUNG

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L21/285 ,  H01L29/40 ,  H01L23/48

Abstract: B??-86-011 The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin layer of titanium nitride and a thick layer of a refractory metal, e.g., tungsten or molybdenum, overlying the titanium nitride layer.

公开(公告)号：BR9201351A

公开(公告)日：1992-12-01

申请号：BR9201351

申请日：1992-04-13

Applicant: IBM

Inventor： LEE PEI-ING P ,  LICATA THOMAS J ,  MCDEVITT THOMAS L ,  PARRIES PAUL C ,  PENNINGTON SCOTT L ,  RYAN JAMES G ,  STRIPPE DAVID C

IPC: C23C14/46 ,  C23C14/04 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H05K3/40

Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.