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公开(公告)号：JP2001284453A
公开(公告)日：2001-10-12
申请号：JP2001033861
申请日：2001-02-09
Applicant: IBM
Inventor： JUDETH M RUBINO , JAHNES CHRISTOPHER , LINIGER ERIC G , RYAN JAMES G , CARLOS J SANBUSETEI , CARDONE FRANK , PURUSHOTHAMAN SAMPATH , PHIZHIMONS JOHN A , STEVEN M GATES
IPC: C22F1/10 , C22C19/00 , C22F1/00 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L21/324 , H01L21/76 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low dielectric barrier with a superior diffusion characteristic for copper and adhesion, on a copper conductor. SOLUTION: A method comprises; 1) preparing a substrate having a copper conductor, 2) putting a metal alloy film including phosphor or boron as a protective layer, on the copper conductor, 3) carrying out the first annealing process to diffuse a metal alloy including phosphor or boron into 2-4 atom layers at least, on the top of the copper conductor, then 4) putting a dielectric film with low dielectric constant on the metal alloy film including phosphor or boron, and 5) carrying out the second annealing process. The obtained structure has a double layer barrier which includes the metal alloy film including phosphor or boron on the copper conductor and the dielectric material film on the metal alloy film, and shows superior barrier and adhesive characteristics for the copper conductor.
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2.发明专利Method for forming carbon nanotube, filter and exposure system (chemical particle filter including chemically modified carbon nanotube structure) 有权碳纳米管，过滤和曝光体系的制备方法（包括化学改性碳纳米管结构的化学粒子过滤器）
公开(公告)号：JP2006150348A
公开(公告)日：2006-06-15
申请号：JP2005312981
申请日：2005-10-27
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： STEVEN J HOLMES , MARK C HEIKY , HORAK DAVID V , RYAN JAMES G
CPC classification number: B01D53/02 , B01D2253/102 , B01D2253/304 , B01J20/20 , B01J20/205 , B01J20/3242 , B82Y30/00 , Y10S55/05 , Y10S977/742 , Y10S977/745 , Y10S977/748 , Y10S977/75 , Y10S977/752
Abstract: PROBLEM TO BE SOLVED: To provide a carbon nanotube filter, a method for using the carbon nanotube filter and a method for forming the carbon nanotube filter. SOLUTION: This method is comprised of (a) a step for preparing a carbon source and a carbon nanaotube catalyst, (b) a step for growing the carbon nanotube by reacting the carbon source with the nanotube catalyst, (c) a step for chemically forming the active carbon nanotube by chemically forming an active layer on the carbon nanotube or by chemically forming a reactive medium on the side wall of the carbon nanotube and (d) a step for arranging the chemically active nanotube in a filter housing. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种碳纳米管过滤器，使用碳纳米管过滤器的方法和形成碳纳米管过滤器的方法。 解决方案：该方法包括（a）制备碳源和碳纳托管催化剂的步骤，（b）通过碳源与纳米管催化剂反应生长碳纳米管的步骤，（c） 通过在碳纳米管上化学形成活性层或通过在碳纳米管的侧壁上化学形成反应性介质来化学形成活性碳纳米管的步骤和（d）将化学活性纳米管排列在过滤器壳体中的步骤。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：CA2039321A1
公开(公告)日：1991-10-31
申请号：CA2039321
申请日：1991-03-28
Applicant: IBM
Inventor： CRONIN JOHN E , KAANTA CARTER W , LEE PEI-ING P , PREVITI-KELLY ROSEMARY A , RYAN JAMES G , YOON JUNG H
Abstract: BU9-90-013 PROCESS FOR FORMING MULTI-LEVEL COPLANAR CONDUCTOR/INSULATOR FILM EMPLOYING, PHOTOSENSITIVE POLYIMIDE POLYMER COMPOSITIONS of to Disclosure Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate having a conductor pattern. The insulator layers, each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.
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Patent Agency Ranking
公开(公告)号：CA2061119C
公开(公告)日：1998-02-03
申请号：CA2061119
申请日：1992-02-12
Applicant: IBM
Inventor： PENNINGTON SCOTT L , RYAN JAMES G , LICATA THOMAS J , LEE PEI-ING P , PARRIES PAUL C , MCDEVITT THOMAS L , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40 , C23C14/34
Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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公开(公告)号：CA2061119A1
公开(公告)日：1992-10-20
申请号：CA2061119
申请日：1992-02-12
Applicant: IBM
Inventor： LEE PEI-ING P , LICATA THOMAS J , MCDEVITT THOMAS L , PARRIES PAUL C , PENNINGTON SCOTT L , RYAN JAMES G , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40 , C23C14/34
Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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公开(公告)号：BR9201351A
公开(公告)日：1992-12-01
申请号：BR9201351
申请日：1992-04-13
Applicant: IBM
Inventor： LEE PEI-ING P , LICATA THOMAS J , MCDEVITT THOMAS L , PARRIES PAUL C , PENNINGTON SCOTT L , RYAN JAMES G , STRIPPE DAVID C
IPC: C23C14/46 , C23C14/04 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , H05K3/40
Abstract: A sputtering deposition wherein high aspect ratio apertures (50) are coated with conductive films (40) exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator (60) is used having an aspect ratio that approximates the aspect ratio of the apertures (50). The resulting film thickness at the bottom of the aperture is at least 2X what can be achieved using conventional sputtering methods.
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公开(公告)号：CA2084685A1
公开(公告)日：1991-12-20
申请号：CA2084685
申请日：1990-10-16
Applicant: IBM
Inventor： AGARWALA BIRENDRA N , AHSAN AZIZ M , BROSS ARTHUR , CHADURJIAN MARK F , KOOPMAN NICHOLAS G , LEE LI-CHUNG , PUTTLITZ KARL J , RAY SUDIPTA K , RYAN JAMES G , SCHAEFER JOSEPH G , SRIVASTAVA KAMALESH K , TOTTA PAUL A , WALTON ERICK G , WIRSING ADOLF E
IPC: H01L21/60 , H01L23/485 , H05K3/34
Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier, a pad is formed on which a solder mass is deposited and capped with a metal layer, thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
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公开(公告)号：CA2084685C
公开(公告)日：1996-01-16
申请号：CA2084685
申请日：1990-10-16
Applicant: IBM
Inventor： AGARWALA BIRENDRA N , AHSAN AZIZ M , BROSS ARTHUR , CHADURJIAN MARK F , KOOPMAN NICHOLAS G , LEE LI-CHUNG , PUTTLITZ KARL J , RAY SUDIPTA K , RYAN JAMES G , SCHAEFER JOSEPH G , SRIVASTAVA KAMALESH K , TOTTA PAUL A , WALTON ERICK G , WIRSING ADOLF E
IPC: H01L21/60 , H01L23/485 , H05K3/34 , H01L23/488 , H01L23/50
Abstract: The present invention relates generally to a new interconnection and a method for making the same, and more particularly, to an elongated solder interconnection and a method for making the same. On an electronic carrier (12) a pad (14) is formed on which a solder mass (16) is deposited and capped with a metal layer (19), thereby forming an elongated solder interconnection. A further elongated solder interconnection can now be formed by forming a second solder mass (26) on the first solder mass that has been capped by a metal layer. Additional elongated solder interconnection can be formed by capping the preceding solder mass and/or the last solder mass with a metal capping layer. Alternatively, the encapsulating layer can be in the form of a sidewall spacer formed on the sidewalls of the solder mass.
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