公开(公告)号：US3737739A

公开(公告)日：1973-06-05

申请号：US3737739D

申请日：1971-02-22

Applicant: IBM

Inventor： BLAKESLEE A ,  GUKELBERGER T ,  LYONS V

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/84 ,  H01L29/04 ,  H01L5/00

CPC classification number: H01L29/04 ,  H01L21/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/84 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A structure having single crystal islands in a dielectric substrate is described. The substrate has recesses formed in its surface to receive the single crystal bodies therein. By applying a temperature gradient across each of the bodies throughout the entire heating cycle, nucleation occurs only at a bottom point on each of the bodies when a vapor containing the material to be nucleated is passed over the bodies with the material of the bodies being molten. The single crystalline material can be, for example, silicon or germanium and the dielectric material can be, for example, a silicon dioxide glass or a mixed oxide ceramic.

Abstract translation: 描述了在电介质基片中具有单晶岛的结构。 基板在其表面上形成凹部，以容纳其中的单晶体。 通过在整个加热循环中跨每个物体施加温度梯度，当含有待成核材料的蒸汽在物体的材料被熔化时，成核仅发生在每个物体上的底点处 。 单晶材料可以是例如硅或锗，并且介电材料可以是例如二氧化硅玻璃或混合氧化物陶瓷。

公开(公告)号：US3765960A

公开(公告)日：1973-10-16

申请号：US3765960D

申请日：1970-11-02

Applicant: IBM

Inventor： LYONS V ,  POGGE H ,  BOSS D ,  KEMLAGE B

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L7/36 ,  C23C13/02

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  H01L21/74 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S438/916

Abstract: Autodoping is minimized during the growth of an epitaxial layer on a semiconductor substrate by contacting the substrate with a gaseous reaction mixture at a low pressure, substantially below atmospheric to deposit at least the initial capping layer. The reaction mixture contains a relatively minor portion of a semiconductor compound along with a carrier gas. Subsequently, a second gaseous reaction mixture containing a greater portion of a compound of a semiconductor material may be used to complete the deposition of the epitaxial layer. This is done merely to reduce the total growth cycle.

Abstract translation: 在半导体衬底上外延层的生长过程中，通过在基本上低于大气压的低压下将衬底与气态反应混合物接触，使自掺杂最小化，从而沉积至少初始的覆盖层。

公开(公告)号：US3798084A

公开(公告)日：1974-03-19

申请号：US3798084D

申请日：1972-08-11

Applicant: IBM

Inventor： LYONS V

IPC: H01L21/033 ,  H01L21/22 ,  H01L21/223 ,  H01L7/44

CPC classification number: H01L21/223 ,  H01L21/033 ,  H01L21/2225 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/151 ,  Y10S148/167

Abstract: Emitter and base regions of a semiconductor device may be formed simultaneously by a capsule diffusion with a source containing both N type and P type dopants. The dopants utilized must have substantially different diffusion rates. For instance, for a silicon semiconductor substrate, the source may be formed of boron and arsenic-doped silicon.

Abstract translation: 可以通过包含N型和P型掺杂剂的源的胶囊扩散同时形成半导体器件的发射极和基极区域。 使用的掺杂剂必须具有显着不同的扩散速率。 例如，对于硅半导体衬底，源可以由硼和砷掺杂的硅形成。

公开(公告)号：US3796614A

公开(公告)日：1974-03-12

申请号：US3796614D

申请日：1971-12-02

Applicant: IBM

Inventor： BASI J ,  LYONS V

IPC: H01L21/22 ,  C30B31/06 ,  C30B31/16 ,  H01L7/44

CPC classification number: C30B31/165 ,  C30B29/06 ,  C30B31/06 ,  Y10S148/056 ,  Y10S252/951 ,  Y10S438/909

Abstract: THE METHOD DISCLOSED DESCRIBES A PROCEDURE FOR CONTROLLING JUNCTION DEPTH AND SURFACE CONCENTRATION IN DIFFUSION OF ZINC IN GALLIUM ARSENIDE COMPRISING UTILIZING AN ALLOY OF SILICON AND ARSENIC WHEREIN THE TOTAL ARSENIC PRESENT IS BETWEEN ABOUT TWO AND FIFTY ATOMIC PERCENT AND UTILIZING A DIFFUSION TEMPERATURE BETWEEN 800 AND 1000*C.

公开(公告)号：SE322844B

公开(公告)日：1970-04-20

申请号：SE1195565

申请日：1965-09-14

Applicant: IBM

Inventor： GROCHOWSKI E ,  LYONS V

IPC: C30B25/02 ,  H01L21/00 ,  H01L7/36

Abstract: In a method of epitaxially depositing a semi-conductor material on to a semi-conductor substrate, the deposition is temporarily stopped. A silicon or germanium substrate is heated by R.F. coils in a quartz chamber and a gaseous mixture of hydrogen and silicon tetrachloride is passed through the chamber to deposit silicon on the substrate, after, e.g. 1/2 to 5 minutes, the flow of vapour is stopped and hydrogen only is passed through the chamber, after 5 minutes, the flow of vapour is recommenced and the deposition of silicon resumed. The substrate may have antimony as an impurity.ALSO:In a method of epitaxially depositing a semi-conductor material on to a semi-conductor substrate the deposition is temporarily stopped. A silicon or germanium substrate is heated by R.F. coils in a quartz chamber and a gaseous mixture of hydrogen and silicon tetrachloride is passed through the chamber to deposit silicon on the substrate, after, e.g. 1/2 to 5 minutes, the flow of vapour is stopped and hydrogen only is passed through the chamber, after 5 minutes, the flow of vapour is recommenced and the deposition of silicon resumed. The substrate may have antimony as an impurity.