公开(公告)号：DE2060476A1

公开(公告)日：1971-07-22

申请号：DE2060476

申请日：1970-12-09

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MAX D HEURLE FRANCOIS ,  GANGULEE AMITAVA

IPC: H01C17/06 ,  C23C14/14 ,  H01B1/00 ,  H01F10/06 ,  H01F10/10 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H01L39/22 ,  H01L39/24 ,  H05K3/14 ,  C22F3/00

公开(公告)号：DE2001515A1

公开(公告)日：1970-08-27

申请号：DE2001515

申请日：1970-01-14

Applicant: IBM

Inventor： AMES IRVING ,  EDWARD HORSTMANN RICHARD ,  MAX D HEURLE FRANCOIS

IPC: H01L23/52 ,  H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43 ,  H01L19/00

Abstract: This disclosure provides a copper doped aluminum conductive thin film stripe for use as a current-carrying member in a solid state microelectronic configuration which has substantial resistance against circuit failure due to damage caused by current-induced mass transport in the stripe. It has also been discovered for the practice of this invention that the addition of a relatively small amount of copper to an aluminum stripe together with a suitable heat-treatment enhances the extent of its lifetime during current conduction. Preferably, the percentage copper is from the neighborhood of 0.1 percent to the neighborhood of 10 percent by weight composition of copper in the aluminum and with an annealing heat-treatment in the approximate range of 250 DEG C to 560 DEG C. However, for certain operational conditions of the stripe a selected percent less than 54 percent copper by weight composition is advantageous.

公开(公告)号：DE1589959A1

公开(公告)日：1970-01-02

申请号：DEJ0034160

申请日：1967-07-15

Applicant: IBM

Inventor： MAX D HEURLE FRANCOIS ,  ESAKI LEO CHAPPAQUA ,  SEKI HAJIME

IPC: C23C14/16 ,  H01L21/00 ,  H01L29/00 ,  C23C15/00

Abstract: 1,151,643. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 June, 1967 [15 July, 1966], No. 25835/67. Heading H1K. [Also in Division C7] A Schottby-barrier diode is formed by sputtering a layer 7 of metal on to a semi-conductor body 3 which is itself biased during the sputtering process so that contaminants may be sputtered off from the surface while the metal layer 7 is applied. Suitable semi-conductor materials include Si, Ge or GaAs, while the layer 7 may be of a high work-function metal such as W, Cr or Mo for N-type material, or a low work-function metal such as Al, In, Sn, or Zn for P-type material. The preferred form comprises an N-type layer 5 epitaxially deposited on a high conductivity (e.g. degenerate) substrate 3, the metal layer 7 being sputtered on to the epitaxial layer 5. Suitable sputtering apparatus is described, in which the sputtering gas used is argon. The semi-conductor substrate is initially etched clean, and may also be heated during the sputtering process. The metal layer 7 may form a compound, e.g. a metal-silicide; with the semi-conductor surface, thus producing a good mechanical bond.