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    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD
    1.
    发明专利
    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD 失效

    公开(公告)号：JPH1160275A

    公开(公告)日：1999-03-02

    申请号：JP15967898

    申请日：1998-06-08

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: C03C15/00 ,  C09K13/08 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To selectively etch silicate glass at a speed faster than to silicon dioxide by bringing a material containing silicate glass and silicon dioxide into contact with an etching composition containing a specific amount of fluorine-containing compound and an organic solvent selected from oxolane, etc. SOLUTION: A material containing silicate glass and silicon dioxide and being doped with desirably about 0.5-10 wt.% of at least one element preferably selected from B, As, Sb and P (e.g. a blanket silicon wafer) is brought into contact with an etching composition containing about 0.05-3 mol of a fluorine- containing compound preferably selected from hydrofluoric acid, ammonium fluoride, a fluoroborate, tetrabutylammonium tetrafluoroborate, fluoroboric acid or the like and an organic solvent selected from oxolane, sulfolane, an ester, a ketone, an aldehyde, a lactone, a hydrocarbon halide, a monohydric alcohol, an amine and an imide.

    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR
    3.
    发明专利
    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR 失效

    公开(公告)号：JPH11121442A

    公开(公告)日：1999-04-30

    申请号：JP22878798

    申请日：1998-08-13

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: H01L21/306 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To provide a method of etching silicon nitride with an etching rate which is at least as fast as that for silicon dioxide, by contacting a target material containing silicon nitride and silicon dioxide to a composite etchant which is composed of a fluorine-containing compound of a specified molar concentration, an organic solvent, and water of a specified molar concentration. SOLUTION: Silicon nitride lies in a target material containing silicon dioxide, and a composite etchant contacts to both the silicon nitride and the silicon dioxide. The composite etchant contains a fluorine-containing compound, an organic solvent, and water. The concentration of the fluorine-containing compound shall be approximately 0.1-3 mol/dm , more preferably approximately 0.15-1.5 mol/dm , and most preferably approximately 0.2-1 mol/dm . Generally, the concentration of the water shall be approximately 0.1-4 mol/dm , more preferably approximately 0.15-2 mol/dm , and most preferably approximately 0.2-1.5 mol/dm .

    WET WASHING APPARATUS AND METHOD THEREFOR
    4.
    发明专利
    WET WASHING APPARATUS AND METHOD THEREFOR 审中-公开

    公开(公告)号：JP2002343762A

    公开(公告)日：2002-11-29

    申请号：JP2002110323

    申请日：2002-04-12

    Applicant: IBM

    Inventor： TAFT CHARLES J ,  MCCULLOUGH KENNETH J ,  GEORGE F OUIMET ,  RATH DAVID L ,  ZIGNER ROBERT W JR

    IPC: H01L21/306 ,  B08B3/00 ,  C11D11/00 ,  G05D21/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213

    Abstract: PROBLEM TO BE SOLVED: To provide a system that minimizes damage in metal feature, and influence due to costs and wastes, and at the same time achieves effective and predictable semiconductor wafer washing. SOLUTION: In the washing apparatus and method of semiconductor wafers, deionized water is set to at least 80%, and a dilute solution is used. In this case, the dilute solution contains oxidizer such as sulfuric acid and hydrogen peroxide water, and a small amount of hydrofluoric acid (HF) of approximately 5 to 12 ppm preferably. An automated system mixes the sulfuric acid, hydrogen peroxide water, and HF, and generates washing liquid having target HF concentration within a preferable range such as 8 ppm. After that, the system maintains HF concentration within a range of approximately 0.5 to 1 ppm from at least target HF concentration.

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