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    SLURRY HAVING HIGH SELECTIVITY AND CHEMICAL-MECHANICAL POLISHING OF COMPOSITE MATERIAL SUBSTRATE
    1.
    发明专利
    SLURRY HAVING HIGH SELECTIVITY AND CHEMICAL-MECHANICAL POLISHING OF COMPOSITE MATERIAL SUBSTRATE 失效

    公开(公告)号：JPH11330025A

    公开(公告)日：1999-11-30

    申请号：JP5812699

    申请日：1999-03-05

    Applicant: IBM

    Inventor： CANAPERI DONALD F ,  JAGANNATHAN RANGARAJAN ,  MAHAADEVIIERU KURISHUNAN ,  CLIFFORD OWEN MORGAN ,  WRIGHT TERRANCE M

    IPC: B24B37/00 ,  C09K13/00 ,  H01L21/304 ,  H01L21/3105

    Abstract: PROBLEM TO BE SOLVED: To enable a first film to align when a second film on a plane by adding triethanolamine to a polishing slurry, which reacts with the first film and with the second film of a second material under a predetermined part of the first film, to increase the reactivity with respect to the first film and by exposing the second film by interrupting the polishing, when the first film is removed completely. SOLUTION: In order to control the polishing speed of the material of a composite material substrate, the substrate having a first film formed of a first material and a second film formed of a second material lying under a predetermined part of the first film is chemical-mechanical polished using a slurry reacting, with the first and second films so as to remove the most part of the first film. Then, adequate amount of triethanolamine is added to the slurry for increasing the reactivity of the slurry with the first film and chemical- mechanical polishing is carried out. Thereupon, the residual part of the first film is removed, and if the polishing is interrupted when the first film on the part under which second film lies is removed completely, a specified part is exposed so that the first film is aligned with the second film on a plane.

    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR
    2.
    发明专利
    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR 失效

    公开(公告)号：JPH11121442A

    公开(公告)日：1999-04-30

    申请号：JP22878798

    申请日：1998-08-13

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: H01L21/306 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To provide a method of etching silicon nitride with an etching rate which is at least as fast as that for silicon dioxide, by contacting a target material containing silicon nitride and silicon dioxide to a composite etchant which is composed of a fluorine-containing compound of a specified molar concentration, an organic solvent, and water of a specified molar concentration. SOLUTION: Silicon nitride lies in a target material containing silicon dioxide, and a composite etchant contacts to both the silicon nitride and the silicon dioxide. The composite etchant contains a fluorine-containing compound, an organic solvent, and water. The concentration of the fluorine-containing compound shall be approximately 0.1-3 mol/dm , more preferably approximately 0.15-1.5 mol/dm , and most preferably approximately 0.2-1 mol/dm . Generally, the concentration of the water shall be approximately 0.1-4 mol/dm , more preferably approximately 0.15-2 mol/dm , and most preferably approximately 0.2-1.5 mol/dm .

    PLANARIZING METHOD FOR SEMICONDUCTOR WAFER
    4.
    发明专利
    PLANARIZING METHOD FOR SEMICONDUCTOR WAFER 失效

    公开(公告)号：JPH1174243A

    公开(公告)日：1999-03-16

    申请号：JP19132798

    申请日：1998-07-07

    Applicant: IBM

    Inventor： HUYNH CUC ,  JAGANNATHAN RANGARAJAN ,  JHA AMARNATH ,  MARTIN THOMAS ,  POPE KEITH ,  SANDWICK THOMAS

    IPC: H01L21/304 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/306

    Abstract: PROBLEM TO BE SOLVED: To enable efficient removal of residual slurry in chemical and mechanical polishing with semiconductor by using a solution of trialkanolamine as a cleaning agent. SOLUTION: A solution of trialkanolamine expressed by the formula is used in the stage of polishing a semiconductor wafer. In the formula, n is an integer from 2-8. Trialkanolamine contained in the formula includes, for example, triethanolamine, tripropanolamine, and tributanolamine but triethanolamie(TEA) is preferable. If necessary, the polished wafer may be immersed in a solution of TEA in the stage of unload station. Triethanolamie can be used as a solution with a concentration such that pH reaches up to approx. 10, however, it may be used with a concentration the range of 0.001%-5% in the unload station of a polisher.

    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD
    5.
    发明专利
    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD 失效

    公开(公告)号：JPH1160275A

    公开(公告)日：1999-03-02

    申请号：JP15967898

    申请日：1998-06-08

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: C03C15/00 ,  C09K13/08 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To selectively etch silicate glass at a speed faster than to silicon dioxide by bringing a material containing silicate glass and silicon dioxide into contact with an etching composition containing a specific amount of fluorine-containing compound and an organic solvent selected from oxolane, etc. SOLUTION: A material containing silicate glass and silicon dioxide and being doped with desirably about 0.5-10 wt.% of at least one element preferably selected from B, As, Sb and P (e.g. a blanket silicon wafer) is brought into contact with an etching composition containing about 0.05-3 mol of a fluorine- containing compound preferably selected from hydrofluoric acid, ammonium fluoride, a fluoroborate, tetrabutylammonium tetrafluoroborate, fluoroboric acid or the like and an organic solvent selected from oxolane, sulfolane, an ester, a ketone, an aldehyde, a lactone, a hydrocarbon halide, a monohydric alcohol, an amine and an imide.

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