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    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD
    1.
    发明专利
    SELECTIVE ETCHING OF SILICATE AND ETCHING COMPOSITION SUITABLE FOR THE METHOD 失效

    公开(公告)号：JPH1160275A

    公开(公告)日：1999-03-02

    申请号：JP15967898

    申请日：1998-06-08

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: C03C15/00 ,  C09K13/08 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To selectively etch silicate glass at a speed faster than to silicon dioxide by bringing a material containing silicate glass and silicon dioxide into contact with an etching composition containing a specific amount of fluorine-containing compound and an organic solvent selected from oxolane, etc. SOLUTION: A material containing silicate glass and silicon dioxide and being doped with desirably about 0.5-10 wt.% of at least one element preferably selected from B, As, Sb and P (e.g. a blanket silicon wafer) is brought into contact with an etching composition containing about 0.05-3 mol of a fluorine- containing compound preferably selected from hydrofluoric acid, ammonium fluoride, a fluoroborate, tetrabutylammonium tetrafluoroborate, fluoroboric acid or the like and an organic solvent selected from oxolane, sulfolane, an ester, a ketone, an aldehyde, a lactone, a hydrocarbon halide, a monohydric alcohol, an amine and an imide.

    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR
    2.
    发明专利
    ETCHING OF SILICON NITRIDE AND ETCHANT THEREFOR 失效

    公开(公告)号：JPH11121442A

    公开(公告)日：1999-04-30

    申请号：JP22878798

    申请日：1998-08-13

    Applicant: IBM

    Inventor： RATH DAVID L ,  JAGANNATHAN RANGARAJAN ,  MCCULLOUGH KENNETH J ,  OKORN-SCHMIDT HARALD F ,  MADDEN KAREN P ,  POPE KEITH R

    IPC: H01L21/306 ,  H01L21/308 ,  H01L21/311

    Abstract: PROBLEM TO BE SOLVED: To provide a method of etching silicon nitride with an etching rate which is at least as fast as that for silicon dioxide, by contacting a target material containing silicon nitride and silicon dioxide to a composite etchant which is composed of a fluorine-containing compound of a specified molar concentration, an organic solvent, and water of a specified molar concentration. SOLUTION: Silicon nitride lies in a target material containing silicon dioxide, and a composite etchant contacts to both the silicon nitride and the silicon dioxide. The composite etchant contains a fluorine-containing compound, an organic solvent, and water. The concentration of the fluorine-containing compound shall be approximately 0.1-3 mol/dm , more preferably approximately 0.15-1.5 mol/dm , and most preferably approximately 0.2-1 mol/dm . Generally, the concentration of the water shall be approximately 0.1-4 mol/dm , more preferably approximately 0.15-2 mol/dm , and most preferably approximately 0.2-1.5 mol/dm .

    Method of preventing electrochemical melting induced by light in chemical mechanical polishing
    3.
    发明专利
    Method of preventing electrochemical melting induced by light in chemical mechanical polishing 有权
    在化学机械抛光中防止光诱导电化学熔融的方法

    公开(公告)号：JPH11274114A

    公开(公告)日：1999-10-08

    申请号：JP2363999

    申请日：1999-02-01

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

    Inventor： DANIEL C EDELSTEIN ,  WILMA J HORKANS ,  STEVEN E RUTH ,  NAPHTALI LUSTIG ,  POPE KEITH R ,  PETER D ROPER

    IPC: H01L21/304 ,  B24B37/34 ,  B24B49/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/321

    CPC classification number: B24B37/34 ,  B24B49/12 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67028

    Abstract: PROBLEM TO BE SOLVED: To prevent the electrochemical melting of a metal induced by the exposure of a semiconductor to light during a chemical mechanical polishing, by preventing a PN junction from being exposed to light generating a photoelectric effect.
    SOLUTION: A PN junction 300 contains an n-type semiconductor material 320 and a p-type semiconductor materail 310 which are arranged in parallel, and shows a photoelectric effect under a certain condition. The photoelectric effect substantailly transforms the PN junction 300 to a cell supplying a current to metal connections 330, 340. The application of the photons of light 350 having sufficient energy to the PN junction 300 generates the photoelectric effect and a current source similar to a cell and an electrochemical melting by a photoelectric voltage. Therefore, the electrochemical melting is reduced by preventing the PN junction from being exposed to light generating the photoelectric effect.
    COPYRIGHT: (C)1999,JPO

    Abstract translation: 要解决的问题：通过防止PN结暴露于产生光电效应的光，防止在化学机械抛光期间由半导体暴露于光引起的金属的电化学熔融。 解决方案：PN结300包含平行布置的n型半导体材料320和p型半导体材料310，并且在一定条件下显示光电效应。 光电效应将PN结300适当地转换为向金属连接330,340提供电流的电池。将具有足够能量的光350的光子施加到PN结300产生类似于电池的光电效应和电流源 并通过光电电压进行电化学熔化。 因此，通过防止PN结暴露于产生光电效应的光而降低电化学熔融。

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