公开(公告)号：DE3783162D1

公开(公告)日：1993-02-04

申请号：DE3783162

申请日：1987-05-26

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  MURAKAMI MASANORI ,  PRICE WILLIAM HENRY ,  TIWARI SANDIP ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L21/20 ,  H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L29/40 ,  H01L29/20

公开(公告)号：CA1143864A

公开(公告)日：1983-03-29

申请号：CA361868

申请日：1980-09-26

Applicant: IBM

Inventor： KIRCHER CHARLES J ,  HUANG HUNG-CHANG W ,  MURAKAMI MASANORI

IPC: H01L39/22 ,  H01L39/24

Abstract: JOSEPHSON DEVICES OF IMPROVED THERMAL CYCLABILITY AND METHOD Thin film electrodes particularly suited for Josephson devices of improved thermal cyclability are prepared by depositing thin films of superconductive metal and an intermetallic compound former on a substrate held at a temperature below about 100.degree.K and at a pressure below about 1 x 10-7 Torr so that intermetallic compound formation occurs at the grain boundaries of the metal to inhibit grain growth. The thin film electrodes are characterized by median grain size

公开(公告)号：DE3882398T2

公开(公告)日：1994-02-17

申请号：DE3882398

申请日：1988-02-24

Applicant: IBM

Inventor： MURAKAMI MASANORI ,  PRICE WILLIAM HENRY

IPC: H01L29/872 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/78 ,  H01L29/812 ,  H01L29/40

Abstract: A thermally stable low resistance ohmic contact to a gallium and arsenic containing substrate is fabricated using a layer of refractory material, and a layer of indium and a metal which forms thermally stable intermetallic compounds and/or single solid phase with indium. In forming the contact, a layer of indium is sandwiched between two layers of said metal, the sandwiched array of layers sitting on the substrate with the refractory material layer on top to form a stratified structure. The stratified structure is heated to form at least one intermetallic compound of said metal and indium and/or a single solid phase of indium and said metal and an InGaAs layer at the metal/semiconductor interface. Also a uniform fine distribution of InGaAs layer at the metal/gallium arsenide interface is formed which results in low contact resistance.

公开(公告)号：DE3882398D1

公开(公告)日：1993-08-26

申请号：DE3882398

申请日：1988-02-24

Applicant: IBM

Inventor： MURAKAMI MASANORI ,  PRICE WILLIAM HENRY

IPC: H01L29/872 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/43 ,  H01L29/45 ,  H01L29/47 ,  H01L29/78 ,  H01L29/812 ,  H01L29/40

Abstract: A thermally stable low resistance ohmic contact to a gallium and arsenic containing substrate is fabricated using a layer of refractory material, and a layer of indium and a metal which forms thermally stable intermetallic compounds and/or single solid phase with indium. In forming the contact, a layer of indium is sandwiched between two layers of said metal, the sandwiched array of layers sitting on the substrate with the refractory material layer on top to form a stratified structure. The stratified structure is heated to form at least one intermetallic compound of said metal and indium and/or a single solid phase of indium and said metal and an InGaAs layer at the metal/semiconductor interface. Also a uniform fine distribution of InGaAs layer at the metal/gallium arsenide interface is formed which results in low contact resistance.

公开(公告)号：DE3783162T2

公开(公告)日：1993-07-01

申请号：DE3783162

申请日：1987-05-26

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  MURAKAMI MASANORI ,  PRICE WILLIAM HENRY ,  TIWARI SANDIP ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L21/20 ,  H01L21/28 ,  H01L29/43 ,  H01L29/45 ,  H01L29/40 ,  H01L29/20

公开(公告)号：DE3070834D1

公开(公告)日：1985-08-08

申请号：DE3070834

申请日：1980-09-25

Applicant: IBM

Inventor： KIRCHER CHARLES JOHN ,  HUANG HUNG-CHANG WARD ,  MURAKAMI MASANORI

IPC: H01L39/22 ,  H01L39/24

Abstract: Process for fabricating thin film electrodes particularly suited for Josephson devices of improved thermal cyclability comprising the steps of depositing thin films of superconductive metal and an intermetallic compound former on a substrate held at a temperature below about 100 DEG K and at a pressure below about 1 x 10 Torr so that intermetallic compound formation occurs at the grain boundaries of the metal to inhibit grain growth. The thin film electrodes are characterized by median grain size of