公开(公告)号：JPS62135392A

公开(公告)日：1987-06-18

申请号：JP25867986

申请日：1986-10-31

Applicant: IBM

Inventor： CROWE JESSE RICHARD ,  DOVE DEREK BRIAN ,  SHIH KWANG KUO

IPC: B41J31/00 ,  B41M5/025 ,  B41M5/26 ,  B41M5/382

公开(公告)号：DE2242138A1

公开(公告)日：1973-03-08

申请号：DE2242138

申请日：1972-08-26

Applicant: IBM

Inventor： BLUM JOSEPH MARTIN ,  BURSTELL CARL BERNARD ,  DEGELORMO JOSEPH FRANCIS ,  SHIH KWANG KUO

IPC: C30B19/00 ,  C30B19/06 ,  C30B19/10 ,  H01L21/00 ,  H01L21/208 ,  B01J17/06

公开(公告)号：IT1165405B

公开(公告)日：1987-04-22

申请号：IT2824679

申请日：1979-12-20

Applicant: IBM

Inventor： SHIH KWANG KUO

IPC: B41J2/135 ,  G01N21/88 ,  H01L21/304 ,  H01L21/306 ,  C09K

Abstract: The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.

公开(公告)号：DE3170598D1

公开(公告)日：1985-06-27

申请号：DE3170598

申请日：1981-07-21

Applicant: IBM

Inventor： PALMER MICHAEL JON ,  SHIH KWANG KUO

IPC: H01R33/76 ,  C23F1/02 ,  C30B33/00 ,  C30B33/10 ,  G02B6/36 ,  G02B6/38 ,  H01L21/02 ,  H01L21/306 ,  H01R3/08 ,  H01R4/68 ,  H01R23/68 ,  H05K3/00 ,  H05K3/42

公开(公告)号：DE2860581D1

公开(公告)日：1981-04-23

申请号：DE2860581

申请日：1978-08-25

Applicant: IBM

Inventor： HUNG ROLAND YEN-MOU ,  SHIH KWANG KUO

IPC: H01L27/15 ,  H01L33/00

Abstract: Monolithic light emitting diode arrays may be fabricated by using a two layer binary semiconductor substrate wafer providing a gradient of ingredient concentration in one portion of the wafer and forming p-n junctions to a desired depth in the graded concentrated wafer and selectively removing portions of the opposite sides of the wafer adjacent to said p-n junctions in order to permit light of varying colors to escape and to provide optical isolation. Metallurgical pads are provided to each of the p-n junctions for solder reflow type connections.

公开(公告)号：DE3375559D1

公开(公告)日：1988-03-10

申请号：DE3375559

申请日：1983-11-22

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG KUO

IPC: B41M5/382 ,  B41J31/00 ,  B41J31/02 ,  B41M5/20 ,  B41M5/24 ,  B41M5/26

Abstract: A resistive ribbon for use in thermal transfer printing is described. The ribbon includes a resistive layer formed of a composition including a metal and a wide bandgap insulator. The ribbon may include a separate support layer. Electrical current through the resistive layer produces heat which locally melts the ink for transfer to an adjacent receiving medium. The wide bandgap insulator of the resistive layer must have a bandgap of at least three volts. Many different metals and insulators can be used, where the relative amounts of metal and insulator are chosen to provide a desired resistivity for any type of resistive ribbon printing application.Suitable metals are Ti, Ni, Cr, Mo, W, Cu, Au, Co, Sn, Al, Ta, Mg, and In, and suitable wide bandgap insulators are Al 2 O 3 , SiO, SiO 2 , TiO, TiO 2 , Mg, Cr 2 O 3 , Sn0 2 , AIN, Ta 2 0 5 , and Ge 3 N 4 .

公开(公告)号：DE3266209D1

公开(公告)日：1985-10-17

申请号：DE3266209

申请日：1982-10-05

Applicant: IBM

Inventor： AVIRAM ARI ,  SHIH KWANG KUO

IPC: B41J31/00 ,  B41M5/26 ,  B41M5/382

公开(公告)号：DE2965006D1

公开(公告)日：1983-04-14

申请号：DE2965006

申请日：1979-11-27

Applicant: IBM

Inventor： SHIH KWANG KUO

IPC: B41J2/135 ,  G01N21/88 ,  H01L21/304 ,  H01L21/306 ,  G01N1/28 ,  G01N1/32

Abstract: The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.

公开(公告)号：FR2404308A1

公开(公告)日：1979-04-20

申请号：FR7824961

申请日：1978-08-21

Applicant: IBM

Inventor： FANG FRANK FU ,  SHIH KWANG KUO

IPC: H01L27/15 ,  H01L33/00

Abstract: Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-xCx semiconductor. Diodes emitting various light colors can selectively be formed in different regions of the gradient by etching away a portion of the graded region. Arrays of colored light emitting diodes can be made by the techniques of diffusion and selective etching of the graded material.

公开(公告)号：DE2838818A1

公开(公告)日：1979-03-29

申请号：DE2838818

申请日：1978-09-06

Applicant: IBM

Inventor： FANG FRANK FU ,  SHIH KWANG KUO

IPC: H01L27/15 ,  H01L33/00

Abstract: Multicolor light emitting diode arrays can be made using a binary semiconductor substrate on which is grown a graded epitaxial region of an AB1-xCx semiconductor. Diodes emitting various light colors can selectively be formed in different regions of the gradient by etching away a portion of the graded region. Arrays of colored light emitting diodes can be made by the techniques of diffusion and selective etching of the graded material.