公开(公告)号：JP2006344960A

公开(公告)日：2006-12-21

申请号：JP2006156597

申请日：2006-06-05

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  STEPHEN J HOLMES ,  HORAK DAVID V ,  MITCHELL PETER H

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide an immersion lithography device and its method. SOLUTION: A lithographic optical column structure is disclosed for performing immersion lithography, at least on a projection optical system and a wafer of an optical system inside different fluids of equal pressure. In particular, a supercritical fluid is introduced to the periphery of the wafer with identical pressure, and another fluid, for example an inert gas, is introduced in at least the projection optical system of the optical system, thereby comprising the immersion lithography device which does not require special lenses. Furthermore, a chamber is provided which encloses the wafer to be exposed and at least a projection optical component of the optical system, and is filled with a supercritical immersion fluid. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2000036596A

公开(公告)日：2000-02-02

申请号：JP11771499

申请日：1999-04-26

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  MARK C HEIKY ,  STEPHEN J HOLMES ,  DAVID V HORAK

IPC: H01L29/78 ,  H01L21/223 ,  H01L21/28 ,  H01L21/32 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To form a narrow gate and a shallow expansion part by providing a layer (substrate) including one polysilicon gate and one source/drain region, and by simultaneously doping one gate stack and the source/drain region. SOLUTION: Vapor-phase doping is selectively used, and a polysilicon gate and an S/D region are simultaneously doped. Especially, a gate stack 20 and a well 18 that are not doped are covered with an appropriate diffusion prevention material 40. An S/D region 19 and a polysilicon gate 24 are exposed to n- and p-type gases or a doping source 30 of plasma. The gases can be variously changed corresponding to p and n types. For example, arsine AsH3 is used as arsenic trichloride AsCl3, phosphine PH3, and n-type gas dopant. When a masked laser beam is used, a diffusion prevention material 40 is eliminated, and reaction is repeated for the remaining stack 20 and the S/D region 19 by a type opposite to the doping source being used firstly.