公开(公告)号：JP2013080971A

公开(公告)日：2013-05-02

申请号：JP2013019016

申请日：2013-02-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： LAWRENCE CLEVENGER ,  TIMOTHY JOSEPH DALTON ,  HSU LOUIS LU-CHEN ,  RADENS CARL JOHN ,  VIDYA RAMACHANDRAN ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

IPC: H01L21/822 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/04

CPC classification number: H01L21/84 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10S438/957 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming semiconductor devices having wafer back-side capacitors.SOLUTION: A method includes the following steps of: preparing an SOI substrate having a buried insulating layer inserted between a front-side active silicon layer and a back-side bulk silicon layer; forming on the front side of the SOI substrate an integrated circuit including a buried contact plug extending from the front side of the SOI substrate while penetrating through the buried insulating layer; performing back-side etching process to form a trench in the bulk silicon layer and expose an end part of the buried contact plug to the back side surface of the buried insulating layer; and forming in a trench a capacitor including a first capacitor plate, a second capacitor plate, and a capacitor dielectric layer inserted between the first and second capacitor plates. The first capacitor plate is formed to contact with the exposed end part of the buried contact plug.

Abstract translation: 要解决的问题：提供一种形成具有晶片背面电容器的半导体器件的方法。 解决方案：一种方法包括以下步骤：制备插入在前侧活性硅层和后侧体硅层之间的埋入绝缘层的SOI衬底; 在SOI衬底的正面上形成集成电路，该集成电路包括从SOI衬底的前侧延伸穿过掩埋绝缘层的埋入式接触插塞; 执行背面蚀刻工艺以在体硅层中形成沟槽，并将埋入的接触插塞的端部暴露于掩埋绝缘层的背面; 以及在沟槽中形成包括插入在所述第一和第二电容器板之间的第一电容器板，第二电容器板和电容器电介质层的电容器。 第一电容器板形成为与埋入式接触插塞的暴露端部接触。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：SG101955A1

公开(公告)日：2004-02-27

申请号：SG200100551

申请日：2001-02-03

Applicant: IBM

Inventor： STEPHAN ALAN COHEN ,  TIMOTHY JOSEPH DALTON ,  JOHN ANTHONY FITZSIMMONS ,  STEPHEN MCCONNELL GATES ,  LYNNE M GIGNAC ,  PAUL CHARLES JAMISON ,  KANG-WOOK LEE ,  SAMPATH PURUSHOTHAMAN ,  DARRYL D RESTAINO ,  EVA SIMONYI ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/321 ,  H01L23/48

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.

公开(公告)号：SG106653A1

公开(公告)日：2004-10-29

申请号：SG200107687

申请日：2001-12-11

Applicant: IBM

Inventor： TIMOTHY JOSEPH DALTON ,  STEPHEN EDWARD GRECO ,  JEFFREY CURTIS HEDRICK ,  SATYANARAYANA V NITTA ,  SAMPATH PURUSHOTHAMAN ,  KENNETH PARKER RODBELL ,  ROBERT ROSENBERG

IPC: H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L23/532

Abstract: A method for forming a porous dielectric material layer in an electronic structure and the structure formed are disclosed. In the method, a porous dielectric layer in a semiconductor device can be formed by first forming a non-porous dielectric layer, then partially curing, patterning by reactive ion etching, and final curing the non-porous dielectric layer at a higher temperature than the partial curing temperature to transform the non-porous dielectric material into a porous dielectric material, thus forming a dielectric material that has a low dielectric constant, i.e. smaller than 2.6. The non-porous dielectric material may be formed by embedding a thermally stable dielectric material such as methyl silsesquioxane, hydrogen silsesquioxane, benzocyclobutene or aromatic thermoset polymers with a second phase polymeric material therein such that, at the higher curing temperature, the second phase polymeric material substantially volatilizes to leave voids behind forming a void-filled dielectric material.