公开(公告)号：JP2001274250A

公开(公告)日：2001-10-05

申请号：JP2001033679

申请日：2001-02-09

Applicant: IBM

Inventor： KERN STEPHEN A ,  DOLDUN DIMOSI J ,  PHIZHIMONS JOHN A ,  STEPHEN MCCONELL GATES ,  LYN M GIGUNAKKU ,  PAUL CHARLES JAMISON ,  KANUKU LEE ,  PURUSHOTHAMAN SAMPATH ,  DARYL D RESUTAINO ,  EVA SIMONY ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a diffused barrier layer. SOLUTION: A semiconductor device includes a semiconductor substrate including a conductive metallic element and a diffused barrier layer in contact with the conductive metallic element is bonded to at least a part of the substrate, has upper/lower faces and a center part, formed of silicon, carbon, nitrogen and hydrogen and in which silicon is distributed nonuniformly over the whole diffused barrier layer. Thus, concentration of nitrogen near the lower and upper faces of the diffused barrier layer is higher than at the center part of the diffused barrier layer. Then, a method for manufacturing the semiconductor device is also provided.

公开(公告)号：SG101955A1

公开(公告)日：2004-02-27

申请号：SG200100551

申请日：2001-02-03

Applicant: IBM

Inventor： STEPHAN ALAN COHEN ,  TIMOTHY JOSEPH DALTON ,  JOHN ANTHONY FITZSIMMONS ,  STEPHEN MCCONNELL GATES ,  LYNNE M GIGNAC ,  PAUL CHARLES JAMISON ,  KANG-WOOK LEE ,  SAMPATH PURUSHOTHAMAN ,  DARRYL D RESTAINO ,  EVA SIMONYI ,  HORATIO SEYMOUR WILDMAN

IPC: H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/321 ,  H01L23/48

Abstract: A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.