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1.发明公开SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRAM CELL DESIGN FOR DEVICE SCALING 有权自组织排水渠道转型IN A的垂直方向连续性晶体管DRAM单元设计元件结垢
公开(公告)号：EP1661176A4
公开(公告)日：2010-03-24
申请号：EP04780833
申请日：2004-08-12
Applicant: IBM
Inventor： WANG GENG , MCSTAY KEVIN , WEYBRIGHT MARY ELIZABETH , LI YUJUN , CHIDAMBARRAO DURESETI
IPC: H01L21/8234 , H01L21/265 , H01L21/336 , H01L21/8242 , H01L29/10
CPC classification number: H01L27/10876 , H01L21/26586 , H01L27/10864 , H01L29/1041 , H01L29/66537 , H01L29/66666 , H01L29/7827 , H01L29/945
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