公开(公告)号：DE3473651D1

公开(公告)日：1988-09-29

申请号：DE3473651

申请日：1984-06-22

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： ELSASSER MICHAEL ,  STOEHR ROLAND

IPC: G01R1/073

Abstract: The contactor (10) comprises an assembly block attached to a relatively fixed mount by bolts with a degree of emergency overtravel in the 'Z' direction being provided by the spring and bush. The test probes are arranged in a square series of 9 matrices each of which accommodates 285 probes with four probe positions at the corners of each square being occupied by thin stabilising rods. The probe wires (50) slide through a matrix of holes in three guide plates set at predetermined spacings and supported in the frames and the stripper plates supported in frames. Above exit plate, the probe wires converge into bundles leading to cables and within the carrier block are embedded in cast resin.

公开(公告)号：DE2830589A1

公开(公告)日：1980-01-31

申请号：DE2830589

申请日：1978-07-12

Applicant: IBM DEUTSCHLAND

Inventor： STOEHR ROLAND ,  OBMANN ROBERT

IPC: C30B31/10 ,  C30B31/16 ,  C30B33/00 ,  H01L21/20

Abstract: The furnace has a reaction tube wish several reaction zones behind each other, each with different gas atmos. The mixing of the reaction gases is prevented by partitions reaching down from the furnace top almost to the semiconductor chips. An exhaust system provides the gas circulation. The transport system for the chips (10) is formed by a row of longitudinal beams (7, 8) with loading and unloading devices. Some beams (8) are stationary and have their surface horizontal in a given plane. Other beams (7) are movable by a drive system (11, 14) in the direction of tube axis and orthogonally to the plane of the stationary beam surfaces. During each closed movement loop the moving beams are twice at the same height with the stationary ones in an alternating arrangement.

公开(公告)号：DE3886754D1

公开(公告)日：1994-02-10

申请号：DE3886754

申请日：1988-10-19

Applicant: IBM DEUTSCHLAND

Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.