公开(公告)号：SG11201703585RA

公开(公告)日：2017-06-29

申请号：SG11201703585R

申请日：2015-11-24

Applicant: KLA TENCOR CORP

Inventor： MARCIANO TAL ,  BRINGOLTZ BARAK ,  GUREVICH EVGENI ,  ADAM IDO ,  LINDENFELD ZA'EV ,  ZHAO ZENG ,  FELER YOEL ,  KANDEL DANIEL ,  CARMEL NADAV ,  MANASSEN AMNON ,  AMIR NURIEL ,  KAMINSKY ODED ,  YAZIV TAL ,  ZAHARAN OFER ,  COOPER MOSHE ,  SULIMARSKI ROEE ,  LEVIANT TOM ,  SELLA NOGA ,  EFRATY BORIS ,  SALTOUN LILACH ,  HANDELMAN AMIR ,  ASHWAL ELTSAFON ,  BACHAR OHAD

IPC: H01L21/66

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

公开(公告)号：SG11202008601TA

公开(公告)日：2020-10-29

申请号：SG11202008601T

申请日：2018-09-03

Applicant: KLA TENCOR CORP

Inventor： LAMHOT YUVAL ,  AMIT ERAN ,  PELED EINAT ,  SELLA NOGA ,  CHENG WEI-TE AARON

IPC: G03F7/20

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.