公开(公告)号：SG11201906424WA

公开(公告)日：2019-08-27

申请号：SG11201906424W

申请日：2017-12-15

Applicant: KLA TENCOR CORP

Inventor： ADAM IDO ,  LEVINSKI VLADIMIR ,  MANASSEN AMNON ,  LUBASHEVSKY YUVAL

IPC: H01L21/66 ,  G03F7/20

Abstract: COARSEPITCH COARSE PITCH OFFSET+f j.. 4 HEIGHT 80A- \ CELL 1 868 DIFFRACTION COEFFICIENTS r + AND r - 81 80 86A 81 DIFFRACTION COEFFICIENTS r+ AND r' 82 878 87A 82 1-1 cc N 00 O C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 16 August 2018 (16.08.2018) WIPO I PCT ill mu °million °nolo DID Ho oimIE (10) International Publication Number WO 2018/147938 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/66 (2006.01) (21) International Application Number: PCT/US2017/066853 (22) International Filing Date: 15 December 2017 (15.12.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/457,787 10 February 2017 (10.02.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Dept., One Technology Drive, Milpitas, CA 95035 (US). (72) Inventors: ADAM, Ido; Nehar Hayarden 21, 55450 Qiriat Ono (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). LUBASHEVSKY, Yuval; 22 Smolen- skin St., 3436606 Haifa (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corpo- ration, Legal Dept., One Technology Drive, Milpitas, CA 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (54) Title: MITIGATION OF INACCURACIES RELATED TO GRATING ASYMMETRIES IN SCATTEROMETRY MEASURE- MENTS Figure 1 (57) : Scatterometry overlay targets as well as target design and measurement methods are provided, which mitigate the effects of grating asymmetries in diffraction based overlay measurements. Targets comprise additional cells with sub-resolved structures replacing resolved coarse pitch gratings and/or comprise alternating sub-resolved structures with coarse pitch periodicity - to isolate and remove inaccuracies that result from grating asymmetries. Measurement methods utilize orthogonally polarized illumination to isolate the grating asymmetry effects in different measurement directions, with respect to the designed target structures. [Continued on next page] WO 2018/147938 Al MIDEDIMOMMIONERIOMMIMMIEDIOMMOVOIMIE UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

公开(公告)号：SG11201703585RA

公开(公告)日：2017-06-29

申请号：SG11201703585R

申请日：2015-11-24

Applicant: KLA TENCOR CORP

Inventor： MARCIANO TAL ,  BRINGOLTZ BARAK ,  GUREVICH EVGENI ,  ADAM IDO ,  LINDENFELD ZA'EV ,  ZHAO ZENG ,  FELER YOEL ,  KANDEL DANIEL ,  CARMEL NADAV ,  MANASSEN AMNON ,  AMIR NURIEL ,  KAMINSKY ODED ,  YAZIV TAL ,  ZAHARAN OFER ,  COOPER MOSHE ,  SULIMARSKI ROEE ,  LEVIANT TOM ,  SELLA NOGA ,  EFRATY BORIS ,  SALTOUN LILACH ,  HANDELMAN AMIR ,  ASHWAL ELTSAFON ,  BACHAR OHAD

IPC: H01L21/66

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.