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    DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA
    1.
    发明专利
    DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA 未知

    公开(公告)号：SG11201907074RA

    公开(公告)日：2019-09-27

    申请号：SG11201907074R

    申请日：2018-02-27

    Applicant: KLA TENCOR CORP

    Inventor： GUREVICH EVGENI ,  ADEL MICHAEL E ,  GRONHEID ROEL ,  FELER YOEL ,  LEVINSKI VLADIMIR ,  KLEIN DANA ,  AHARON SHARON

    IPC: H01L21/66

    Abstract: 1 N 1-1 O O 1-1 00 O N C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 07 September 2018 (07.09.2018) WIP0 I PCT IiiimmoinionotiolomomioollmiooliolomovoimIE (10) International Publication Number WO 2018/160502 Al A (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/019793 (22) International Filing Date: 27 February 2018 (27.02.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/464,382 28 February 2017 (28.02.2017) US 62/591,104 27 November 2017 (27.11.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: GUREVICH, Evgeni; Hardufim Str. 12/7, 2063212 Yokneam Illit (IL). ADEL, Michael E.; 14 Yi- gal Alon Street, 30900 Ya'akov Zichron (IL). GRON- HEID, Roel; Sint Jansbergsesteenweg 83, 3001 Leuven (BE). FELER, Yoel; Derech Yad LeBanim 82/2, 32163 Haifa (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). KLEIN, Dana; Alexander Yanai 23, Carmeliya, 34816 Haifa (IL). AHARON, Sharon; Yuval 40, 1796000 Hanaton (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: DETERMINING THE IMPACTS OF STOCHASTIC BEHAVIOR ON OVERLAY METROLOGY DATA MEASUREMENT MODEL CPE EIHO—W3F1

    ESTIMATION OF ASYMMETRIC ABERRATIONS
    3.
    发明专利
    ESTIMATION OF ASYMMETRIC ABERRATIONS 未知

    公开(公告)号：SG11202103847QA

    公开(公告)日：2021-05-28

    申请号：SG11202103847Q

    申请日：2018-10-30

    Applicant: KLA TENCOR CORP

    Inventor： FELER YOEL ,  LEVINSKI VLADIMIR

    IPC: G03F7/20 ,  H01L21/66

    Abstract: Metrology targets, target design methods and menology measurement methods are provided, which estimate the effects of asymmetric aberrations, independently or in conjunction with metrology overlay estimations. Targets comprise one or more pairs of segmented periodic structures having a same coarse pitch, a same 1:1 line to space ratio and segmented into fine elements at a same fine pitch, wherein the segmented periodic structures differ from each other in that one thereof lacks at least one of its corresponding fine elements and/or in that one thereof comprises two groups of the fine elements which are separated from each other by a multiple of the fine pitch. The missing element(s) and/or central gap enable deriving the estimation of aberration effects from measurements of the corresponding segmented periodic structures. The fine pitches may be selected to correspond to the device fine pitches in the corresponding layer.

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    4.
    发明公开
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    FOKUSMESSUNGEN MIT SCATTEROMETRIE

    公开(公告)号：EP3126893A4

    公开(公告)日：2017-10-04

    申请号：EP15774184

    申请日：2015-03-30

    Applicant: KLA-TENCOR CORP

    Inventor： EL KODADI MOHAMMED ,  AMIR NURIEL ,  VOLKOVICH ROIE ,  LEVINSKI VLADIMIR ,  FELER YOEL ,  KANDEL DANIEL ,  GUTMAN NADAV ,  PANDEV STILIAN ,  SANKO DZMITRY

    IPC: G02B15/14 ,  G01N21/47 ,  G03F7/20 ,  G06F17/50 ,  H04N7/18

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元素的周期性结构。 元件沿着垂直于第一方向的第二方向以第二节距周期性地定向，并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。 在产生的目标中，第一间距可以是大约设备间距，并且第二间距可以大几倍。 可以产生第一焦点不敏感图案以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

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