公开(公告)号：JPH06202009A

公开(公告)日：1994-07-22

申请号：JP28153093

申请日：1993-11-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU GIYONRIYUU ,  BOKU SHINSHIYOU ,  BOKU KIYOUMO

IPC: G02F3/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  G02B26/08 ,  H02N1/00

Abstract: PURPOSE: To provide an optical open/close equipment where a micro-electrostatic actuator produced only by semiconductor process is utilized and its producing method. CONSTITUTION: Positive and negative voltages are applied to a selection electrode 3 and a signal electrode 2, to make a traveling element 12 electrified. When the impressed voltage polarity of the signal electrode 2 changes instantaneously, an electric charge electrified to be band-shaped at a traveling element side does not immediately react, owing to the resistance of the travelling element 12. Therefore, driving force for moving the travelling element 12 to a left side occurs together with the repulsion between the travelling element 12 and the electrode 2, so that a shutter travelling element 12 is moved.

公开(公告)号：JPH02298040A

公开(公告)日：1990-12-10

申请号：JP6952190

申请日：1990-03-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KOU JINTOKU ,  BOKU SHINSHIYOU ,  SAI HEITO

IPC: C30B19/12 ,  C30B29/42 ,  H01L21/20 ,  H01L21/338 ,  H01L29/16 ,  H01L29/778 ,  H01L29/812

Abstract: PURPOSE: To improve the doping characteristic of an HEMT by lowering the concentration of an n-type impurity due to DX centers by epitaxially growing a III- or IV-element compound semiconductor layer, in which compound semiconductors having direct and indirect forbidden bands are mixed together on a semiconductor substrate having (111B) plane orientation. CONSTITUTION: A first layer 1 composed of such a semiconductor that is not doped, and having a narrow forbidden band width is grown by using a substrate 9 having a (111B) plane orientation. Then a first semiconductor layer 1 is grown for forming a two-dimensional electron gas 4 and a second three- or four- dimensional semiconductor layer 2, which has a forbidden band width wider than that of the layer 1 and doped with an n-type impurity is grown so as to form a heterogeneous structure 3. In addition, an n-type semiconductor layer 5 is grown to improve a resistive contact. Finally, an HEMT is manufactured by forming a source electrode 6 and a drain electrode 7 on the layer 5 and a gate electrode 8, for adjusting the concentration of the electron gas 4. Therefore, the doping characteristic of the HEMT can be improved by lowering the concentration of the n-type impurity at the DX centers (deep level).

公开(公告)号：JPH08160406A

公开(公告)日：1996-06-21

申请号：JP31506894

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： MINAMI MOTOMORI ,  BOKU SHINSHIYOU ,  KIN HISAHIRO ,  BOKU SOUSHIYUN

IPC: G02F1/1333 ,  G02F1/13 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/35 ,  H01L21/336 ,  H01L29/786

Abstract: PURPOSE: To provide a method for manufacturing a large area flat display utilizing side joint, so as to obtain a large area via the use of the side jointing method. CONSTITUTION: A product technology for realizing a large screen by use of the thin film transistor technology is provided under the application of the entirely unique method of side jointing. In this case, a thin film transistor unit panel 2 is manufactured through a process for the side jointing to form a large area at a side jointing process, and a process for jointing a large area thin film transistor panel 4 to a common electrode panel 5.

公开(公告)号：JPH06222290A

公开(公告)日：1994-08-12

申请号：JP28152693

申请日：1993-11-10

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU GIYONRIYUU ,  BOKU SHINSHIYOU ,  KIN TOUKIYUU ,  IN KIYOUCHIN ,  BOKU TETSUJIYUN ,  SOU BINKEI

IPC: G02F3/00 ,  B81B3/00 ,  C03C17/36 ,  G02B26/02 ,  G02B27/00 ,  G09F9/37 ,  G09G3/20

Abstract: PURPOSE: To provide a fine pixel plane display which can represent static or dynamic video by using an optical switch, utilizing an electrostatic microactuator manufactured only by a semiconductor process. CONSTITUTION: A shutter-moving element 14 at an arbitrary position in a frame 15 is electrostatically charged in a belt-like shape by applying a select electrode 3 and a signal electrode 2 with voltages which are respectively higher and lower than the voltage of a common electrode 4. When an equilibrium state is reached, the voltage applied to the select line is inverted in polarity, in order and then the electric charges of the select electrode 3 change momentarily, but electric charges which accumulated on the side of the moving element 14 are unable to migrate immediately because of disturbance by the resistance. Consequently, a driving for which moves the moving element 14 to the right is generated, together with a repulsive force between the moving element 14 and select electrode 3, so that the shutter-moving element 14 moves to the right side.