公开(公告)号：WO2010058867A1

公开(公告)日：2010-05-27

申请号：PCT/KR2008/006815

申请日：2008-11-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  LEE, Suyoun ,  JEONG, Jeung-hyun ,  CHEONG, Byung Ki ,  KIM, Won Mok ,  JEONG, Doo Seok

Inventor： LEE, Suyoun ,  JEONG, Jeung-hyun ,  CHEONG, Byung Ki ,  KIM, Won Mok ,  JEONG, Doo Seok

IPC: H01L41/113

CPC classification number: F03G7/065

Abstract: A microactuator includes a substrate whose one end is fixed; a phase change film which is deposited on the substrate and has a high phase change rate, high strain and high stress during phase change; a protective film deposited on the phase change film; and a current pulse supply unit for supplying thermal energy to induce the phase transition of the phase change film, wherein the other end of the substrate is moved due to changes of the volume and residual stress of the phase change film accompanied by the phase transition thereof. The phase change film is made of a chalcogenide phase change material.

Abstract translation: 微致动器包括其一端固定的基板; 相变膜沉积在基板上，相变时具有高相变率，高应变和高应力; 沉积在相变膜上的保护膜; 以及用于提供热能以引起相变膜的相变的电流脉冲供给单元，其中基板的另一端由于伴随其相变的相变膜的体积和残余应力的变化而移动 。 相变膜由硫族化物相变材料制成。

公开(公告)号：WO2009084748A1

公开(公告)日：2009-07-09

申请号：PCT/KR2007/006958

申请日：2007-12-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  LEE, Suyoun ,  CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  LEE, Taek Sung ,  KIM, Won Mok

Inventor： LEE, Suyoun ,  CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  LEE, Taek Sung ,  KIM, Won Mok

IPC: G11C13/02

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

Abstract translation: 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。

公开(公告)号：WO2006057541A1

公开(公告)日：2006-06-01

申请号：PCT/KR2005/004039

申请日：2005-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  LEE, Taek Sung ,  KIM, In Ho ,  LEE, Kyeong Seok ,  KIM, Won Mok ,  AHN, Dong-Ho ,  KIM, Ki-Bum

IPC: H01L27/115

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Abstract translation: 本发明提供了一种非易失性相变存储单元，其包含设置在金属电极层和相变材料层之间的电极接触层，电极接触层由透明导电氧化物基材料形成，该材料具有高导电性 ，导热性低，热稳定性好。 可以使用根据本发明的非易失性相变存储器单元来减少复位和设置操作所需的电力。

公开(公告)号：WO2010062116A2

公开(公告)日：2010-06-03

申请号：PCT/KR2009/006996

申请日：2009-11-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  LEE, Kyeong Seok ,  KIM, Won Mok ,  LEE, Taek Sung ,  CHEONG, Byung Ki

Inventor： LEE, Kyeong Seok ,  KIM, Won Mok ,  LEE, Taek Sung ,  CHEONG, Byung Ki

IPC: G01N21/55 ,  G01N21/25 ,  G01N21/00 ,  G01N33/50

CPC classification number: G01N21/553

Abstract: Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

Abstract translation: 提供了一种表面等离子体共振传感器，包括：传输信号光束入射的光以产生ev逝场的一部分; 以及激发表面等离子体的一部分，用于通过产生的ev逝场激发表面等离子体激元，并引起表面等离子体共振，其中介电波导层插入在激发表面等离子体激元的一部分的金属层之间，并且表面等离子体共振性质被改变 由待分析的对象。

公开(公告)号：WO2007001112A1

公开(公告)日：2007-01-04

申请号：PCT/KR2006/001387

申请日：2006-04-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： CHEONG, Byung-ki ,  JEONG, Jeung-hyun ,  KANG, Dae-Hwan ,  JUNG, Han Ju ,  LEE, Taek Sung ,  KIM, In Ho ,  KIM, Won Mok ,  LEE, Kyeong Seok

IPC: H01L27/10

CPC classification number: H01L45/1233 ,  C01B19/002 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1625 ,  Y10T428/21

Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600°C or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

Abstract translation: 本发明提供了一种相变非挥发性记忆材料，其包括基材和至少一种选自硼，碳，氮和氧的非金属光元素，其中所述基材具有对应于 对于每个构成元素，具有最低熔点或共晶熔化的类型的均匀熔融在±0.15原子级的范围内，从而具有600℃或更低的熔融温度。 可以利用根据本发明的相变非易失性存储器材料来降低复位/设置操作所需的电力以及存储单元之间的热干扰。

公开(公告)号：EP2450692B1

公开(公告)日：2019-06-05

申请号：EP09846856.4

申请日：2009-07-01

Applicant: Korea Institute of Science and Technology

Inventor： LEE, Kyeong Seok ,  KIM, Won Mok ,  LEE, Taek Sung

IPC: G01N21/552 ,  G01N21/27 ,  G01N21/41 ,  G01N21/65 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01N21/64

公开(公告)号：EP2450692A1

公开(公告)日：2012-05-09

申请号：EP09846856.4

申请日：2009-07-01

Applicant: KIST Korea Institute of Science and Technology

Inventor： LEE, Kyeong Seok ,  KIM, Won Mok ,  LEE, Taek Sung

IPC: G01N21/27 ,  G01N21/41

CPC classification number: G01N21/554 ,  B82Y15/00 ,  B82Y20/00 ,  G01N21/648 ,  G01N21/658

Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.

Abstract translation: 本发明涉及一种高灵敏度局部表面等离子体共振传感器和涉及使用它的传感器系统，该传感器包括：包括第一金属的第一金属层; 第二金属层，其平行于第一金属层布置并包括第二金属; 以及设置在第一金属层和第二金属层之间的导电交联层，并且由具有不同于第一金属和第二金属的腐蚀响应的第三金属制成。