公开(公告)号：WO0019481A9

公开(公告)日：2002-01-31

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：WO0000999A9

公开(公告)日：2000-10-12

申请号：PCT/US9914790

申请日：1999-06-30

Applicant: LAM RES CORP ,  LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

Inventor： LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  H01L21/00

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532

Abstract: An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

Abstract translation: 可以执行用于等离子体反应室的弹性体接头组件，其中可以执行诸如单个晶片的半导体衬底的处理，该组件的制造方法以及使用该组件处理半导体衬底的方法。 弹性接头组件可以包括诸如电极，窗口，衬垫或其他部分的部件，该部件通过弹性体材料结合到支撑构件。 在电极组件中，支撑构件可以包括通过弹性体接头结合到诸如硅喷头电极的电极的石墨环。 由于电极组件的温度循环，弹性接头允许支撑构件和电极之间的移动以补偿热膨胀。 弹性体接头可以包括导电和/或导热填料，弹性体可以是在高温下稳定的催化剂固化的聚合物。

公开(公告)号：EP1105917A4

公开(公告)日：2003-05-21

申请号：EP99933616

申请日：1999-06-30

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532

Abstract: An elastomeric joint assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the assembly and a method of processing a semiconductor substrate with the assembly. The elastomeric joint assembly can comprise a part such as an electrode, a window, a liner or other part bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring bonded to an electrode such as a silicon showerhead electrode by an elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

Abstract translation: 一种用于等离子体反应室的电极组件，其中可以执行诸如单个晶片的半导体衬底的处理，电极组件的制造方法和使用该组件处理半导体衬底的方法。 电极组件包括诸如石墨环的支撑构件，具有均匀厚度的圆盘形式的诸如硅喷头电极的电极和在支撑构件和电极之间的弹性体接头。 弹性接头允许支撑构件和电极之间的移动，以补偿由于电极组件的温度循环导致的热膨胀。 弹性体接头可以包括导电导热填料，弹性体可以是在高温下稳定的催化剂固化的聚合物。

公开(公告)号：WO0122478A9

公开(公告)日：2002-11-28

申请号：PCT/US0024866

申请日：2000-09-11

Applicant: LAM RES CORP ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

Inventor： KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

IPC: H05H1/46 ,  B01J19/02 ,  B01J19/08 ,  C04B35/565 ,  C23C16/44 ,  H01L21/00 ,  H01L21/3065

CPC classification number: H01L21/67115 ,  C23C16/4401

Abstract: A plasma processing chamber including a ceramic liner heated by radiant heating. The liner can be a series of tiles or a continuous cylindrical liner. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. To remove excess heat from the liner, the ceramic liner can be supported on a resilient aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Abstract translation: 包括通过辐射加热加热的陶瓷衬垫的等离子体处理室。 衬垫可以是一系列瓷砖或连续的圆柱形衬套。 衬垫和诸如气体分配板和等离子体屏幕的其它部件可以由SiC制成，其有利地限制等离子体并且提供腔室的内表面的温度控制。 为了从衬里去除多余的热量，陶瓷衬套可以被支撑在弹性铝支架上，弹性铝支撑框架将热量从衬套传导到温度受控构件，例如室的顶板。 支撑框架可以包括连续的上部和分段的下部，其允许在等离子体室中的半导体衬底的处理期间容纳热应力。

公开(公告)号：WO0019481A2

公开(公告)日：2000-04-06

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：JP2008235924A

公开(公告)日：2008-10-02

申请号：JP2008111896

申请日：2008-04-22

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A

IPC: H01L21/3065 ,  H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022

Abstract: PROBLEM TO BE SOLVED: To provide a method of processing a substrate by reducing particle contamination of the substrate in a plasma processing chamber when the substrate is consecutively processed to process the substrate.
SOLUTION: A plasma processing chamber is provided with a substrate holder 12 and silicon nitride members such as a liner 30, focus ring 14, or gas distribution plate 22. The member has an exposed face in the vicinity of the substrate holder 12. The exposed face is effective for minimizing particle contamination when processing the substrate. The chamber inductively couples with RF energy through the gas distribution plate 22 to supply a plasma gas with energy to make it a plasma state.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种当连续处理衬底以处理衬底时，通过减小等离子体处理室中的衬底的颗粒污染来处理衬底的方法。 解决方案：等离子体处理室设置有衬底保持器12和诸如衬垫30，聚焦环14或气体分配板22的氮化硅构件。该构件在衬底保持器12附近具有暴露面 露出的面对于在加工基材时使颗粒污染最小化是有效的。 腔室通过气体分布板22感应地耦合RF能量，以提供具有能量的等离子体气体以使其成为等离子体状态。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2003133296A

公开(公告)日：2003-05-09

申请号：JP2002207379

申请日：2002-07-16

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: PROBLEM TO BE SOLVED: To provide a plasma reaction chamber having an elastomeric joint, a method for manufacturing the plasma reaction chamber, and a method for treating substrates. SOLUTION: An elastomeric joint assembly can comprise parts such as an electrode, a window, a liner or the like, and/or other parts bonded to a support member by an elastomeric material. In an electrode assembly, the support member can comprise a graphite ring 42 coupled with the electrode of a silicon shower head electrode 42 or the like by the elastomeric joint. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically and/or thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

公开(公告)号：AU4963699A

公开(公告)日：2000-01-17

申请号：AU4963699

申请日：1999-06-30

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46 ,  H01L21/00

Abstract: An electrode assembly for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out, a method of manufacture of the electrode assembly and a method of processing a semiconductor substrate with the assembly. The electrode assembly includes a support member such as a graphite ring, an electrode such as a silicon showerhead electrode in the form of a circular disk of uniform thickness and an elastomeric joint between the support member and the electrode. The elastomeric joint allows movement between the support member and the electrode to compensate for thermal expansion as a result of temperature cycling of the electrode assembly. The elastomeric joint can include an electrically andor thermally conductive filler and the elastomer can be a catalyst-cured polymer which is stable at high temperatures.

公开(公告)号：ES2264263T3

公开(公告)日：2006-12-16

申请号：ES99933616

申请日：1999-06-30

Applicant: LAM RES CORP

Inventor： LILLELAND JOHN ,  HUBACEK JEROME S ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

Abstract: Un conjunto de junta elastomérica de una cámara de reacción de plasma usada en el proceso de un sustrato semiconductor, que comprende: una primera pieza (42) que tiene una superficie de unión, una segunda pieza (44) que tiene una superficie de unión en contacto con la superficie de unión de la primera pieza (42); y una junta (46) elastomérica entre la primera pieza (42) y la segunda pieza (44), fijando de forma resiliente la junta (46) elastomérica la primera pieza (42) con la segunda pieza (44) para permitir el movimiento entre la primera pieza (42) y la segunda pieza (44) durante el ciclo de temperaturas de las mismas; en el que dicha junta elastomérica está localizada en un rebajo (48) en la primera pieza (42) definido por una pared (50) que protege la junta elastomérica (46) del ataque por el medio de plasma en una cámara de reactor de plasma.

公开(公告)号：AU7477900A

公开(公告)日：2001-04-24

申请号：AU7477900

申请日：2000-09-11

Applicant: LAM RES CORP

Inventor： KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  HUBACEK JEROME S

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/50

Abstract: A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. The liner can be heated by a heater which provides heat to the liner by thermal conduction. To remove excess heat from the liner, the resilient support can be an aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.