公开(公告)号：MY148605A

公开(公告)日：2013-05-15

申请号：MYPI20090714

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： WILLIAM THIE

IPC: C23C16/00

Abstract: THE EMBODIMENTS PROVIDE PROCESSES AND INTEGRATED SYSTEMS THAT PRODUCE A METAL-TO-METAL OR A SILICON-TO-METAL INTERFACE TO ENHANCE ELECTRO-MIGRATION PERFORMANCE, TO PROVIDE LOWER METAL RESISTIVITY, AND TO IMPROVE METAL-TO-METAL OR SILICON-TO-METAL INTERFACIAL ADHESION FOR COPPER INTERCONNECTS. AN EXEMPLARY METHOD OF PREPARING A SUBSTRATE SURFACE TO SELECTIVELY DEPOSIT A THIN LAYER OF A COBALT-ALLOY MATERIAL ON A COPPER SURFACE OF IN AN INTEGRATED SYSTEM TO IMPROVE ELECTROMIGRATION PERFORMANCE OF A COPPER INTERCONNECT IS PROVIDED. THE METHOD INCLUDES REMOVING CONTAMINANTS AND METAL OXIDES FROM THE SUBSTRATE SURFACE IN THE INTEGRATED SYSTEM, AND RECONDITIONING THE SUBSTRATE SURFACE USING A REDUCING ENVIRONMENT AFTER REMOVING CONTAMINANTS AND METAL OXIDES IN THE INTEGRATED SYSTEM. THE METHOD ALSO INCLUDES SELECTIVELY DEPOSITING THE THIN LAYER OF COBALT-ALLOY MATERIAL ON THE COPPER SURFACE OF THE COPPER INTERCONNECT IN THE INTEGRATED SYSTEM AFTER RECONDITIONING THE SUBSTRATE SURFACE. SYSTEM TO PRACTICE THE EXEMPLARY METHOD DESCRIBED ABOVE ARE ALSO PROVIDED.

公开(公告)号：MY147845A

公开(公告)日：2013-01-31

申请号：MYPI20085290

申请日：2007-05-25

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  WILLIAM THIE ,  ALGIRDAS VASKELIS ,  EUGENIJUS NORKUS ,  JANE JACIAUSKIENE ,  ALDONA JAGMINIENE

IPC: C23C18/38

Abstract: AN ELECTROLESS COPPER PLATING SOLUTION IS DISCLOSED HEREIN. THE SOLUTION INCLUDES AN AQUEOUS COPPER SALT COMPONENT, AN AQUEOUS COBALT SALT COMPONENT, A POLYAMINE-BASED COMPLEXING AGENT, A CHEMICAL BRIGHTENER COMPONENT, A HALIDE COMPONENT, AND A PH-MODIFYING SUBSTANCE IN AN AMOUNT SUFFICIENT TO MAKE THE ELECTROLESS COPPER PLATING SOLUTION ACIDIC. A METHOD (100) OF PREPARING AN ELECTROLESS COPPER SOLUTION IS ALSO PROVIDED.

公开(公告)号：MY147419A

公开(公告)日：2012-12-14

申请号：MYPI20080850

申请日：2006-09-22

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  WILLIAM THIE ,  YEZDI DORDI ,  BAILEY ANDREW D III

IPC: B23K10/00

Abstract: 17 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR ABSTRACT OF THE DISCLOSURE AN APPARATUS GENERATING A PLASMA FOR REMOVING METAL OXIDE FROM A SUBSTRATE IS 5 DISCLOSED. THE EMBODIMENT INCLUDES A POWERED ELECTRODE ASSEMBLY, INCLUDING A POWERED ELECTRODE, A FIRST DIELECTRIC LAYER, AND A FIRST WIRE MESH DISPOSED BETWEEN THE POWERED ELECTRODE AND THE FIRST DIELECTRIC LAYER. THE EMBODIMENT ALSO INCLUDES A GROUNDED ELECTRODE ASSEMBLY DISPOSED OPPOSITE THE POWERED ELECTRODE ASSEMBLY SO AS TO FORM A CAVITY WHEREIN THE PLASMA IS GENERATED, THE FIRST WIRE MESH BEING SHIELDED FROM THE PLASMA BY THE FIRST DIELECTRIC LAYER WHEN 10 THE PLASMA IS PRESENT IN THE CAVITY, THE CAVITY HAVING AN OUTLET AT ONE END FOR PROVIDING THE PLASMA TO REMOVE THE METAL OXIDE.

公开(公告)号：MY184648A

公开(公告)日：2021-04-14

申请号：MYPI20044983

申请日：2004-12-02

Applicant: LAM RES CORP

Inventor： FRED C REDEKER ,  JOHN BOYD ,  YEZDI N DORDI ,  WILLIAM THIE ,  BOB MARASCHIN ,  JOEL M COOK

IPC: C23C18/16 ,  C23C18/54

Abstract: A method and an apparatus are provided for selective heating of a surface of a wafer (207, 1107) exposed to an electroless plating solution (203, 1103). Selective heating by a radiant energy source (209, 1109) causes a temperature increase at an interface between the wafer surface and the electroless plating solution (203, 1103). This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source (209, 1109). Additionally, a planar member (1119) can be positioned over and proximate to the wafer surface to entrap electroless plating solution (1103) between the planar member (1119) and the wafer surface. Material deposited through the plating reactions forms a planarizing layer (1201) that conforms to a planarity of the planar member. (Figure 2A)

公开(公告)号：SG193076A1

公开(公告)日：2013-09-30

申请号：SG2013005459

申请日：2013-01-21

Applicant: LAM RES CORP

Inventor： QING XU ,  WILLIAM THIE ,  CAMELIA RUSU

Abstract: CONTROLLED GAS MIXING FOR SMOOTH SIDEWALL RAPID ALTERNATING ETCH PROCESSA method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.FIG. 1