Abstract:
An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
Abstract:
An image pickup device includes a pair of first and second substrate facing each other with a vacuum space interposed therebetween, and a plurality of electron-emitting devices provided over said first substrate and a photoconductive layer provided over said second substrate. Each electron-emitting device includes an insulating layer (13) deposited over an electron source layer (12) formed over an ohmic electrode (11); and a metal thin film electrode (15) deposited over said insulating layer. The insulating layer and said metal thin film electrode have an island region (14) of electron-emitting section in which their film thicknesses are gradually reduced toward said electron source layer.
Abstract:
An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.
Abstract:
An electron emitting device includes an electron-supply layer made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound in an amorphous phase, an insulator layer formed on the electron-supply layer and a thin-film metal electrode formed on the insulator layer. Electrons are emitted upon application of an electric field between the electron-supply layer and the thin-film metal electrode. The insulator layer has at least one island region that constitutes an electron emitting section in which the film thickness of the insulator layer is gradually reduced. The electron emitting device further includes a carbon region made of at least of carbon, a mixture containing carbon as a main component and a carbon compound on at least one of a top, bottom and inside of the island region. The island region has a crystalline region made of at least one of silicon, a mixture containing silicon as a main component and a silicon compound within the electron-supply layer in the minimum thickness portion or near thereto.
Abstract:
An electron-emitting device includes an electron source layer (12) made of a metal, a metal alloy or a semiconductor, an insulating layer (13) formed on the electron source layer and a metal thin film electrode (15) formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region (14) which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region (40) made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
Abstract:
An electron-emitting device includes an electron source layer (12) made of a metal, a metal alloy or a semiconductor, an insulating layer (13) formed on the electron source layer and a metal thin film electrode (15) formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region (14) which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region (40) made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.
Abstract:
An electron emission device comprises an electron-supply layer made of metal or semiconductor and disposed on an ohmic electrode; an insulator layer formed on the electron-supply layer; and a thin-film metal electrode formed on the insulator layer. The electron-supply layer is essentially composed of elements belonging to group IV and contains an additive of at least one material selected from atomic elements belonging to group III or V.