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公开(公告)号:JP2013128147A
公开(公告)日:2013-06-27
申请号:JP2013052556
申请日:2013-03-14
Inventor: BRAHMANANDAM V TANIKELLA , SIMPSON MATTHEW A , CHINNAKARPAN PARNIAPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
IPC: H01L21/304 , C30B29/20
CPC classification number: B24B7/228 , Y10T428/257 , Y10T428/26
Abstract: PROBLEM TO BE SOLVED: To provide a larger high quality substrate.SOLUTION: A sapphire substrate comprises a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having an nTTV of about 0.037 μm/cmor less, where the nTTV is total thickness variation normalized for the surface area of the generally planar surface, the substrate having a diameter of about 9.0 cm or greater.
Abstract translation: 要解决的问题:提供更大的高品质基板。 解决方案:蓝宝石衬底包括具有选自由a面,r面,m面和c面取向组成的组的结晶取向的大致平坦的表面,并且具有约0.037μm/ cm
2 SP>或更小,其中nTTV是对于大致平坦的表面的表面积归一化的总厚度变化,基底具有约9.0cm或更大的直径。 版权所有(C)2013,JPO&INPIT -
公开(公告)号:JP2012250344A
公开(公告)日:2012-12-20
申请号:JP2012185056
申请日:2012-08-24
Inventor: TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
CPC classification number: C30B29/20
Abstract: PROBLEM TO BE SOLVED: To provide a sapphire substrate that has a larger size than that of a conventional substrate and is of high quality.SOLUTION: The sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation: 要解决的问题:提供具有比常规基板大的尺寸的蓝宝石基板,并且具有高质量。 解决方案:蓝宝石衬底包括大致平坦的表面,其具有选自由a面,r面,m面和c面取向组成的组的结晶取向,并且具有不大于约的nTTV 0.037μm/ cm 2,其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化,基底的直径不小于约9.0cm。 版权所有(C)2013,JPO&INPIT
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公开(公告)号:WO2008083081A3
公开(公告)日:2008-11-06
申请号:PCT/US2007088576
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS , TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
Inventor: TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
CPC classification number: B24B7/228 , Y10T428/257 , Y10T428/26
Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm 2 , wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation: 蓝宝石衬底包括具有选自由a面,r面,m面和c面取向组成的组的结晶取向,且具有不大于约0.037μm/ cm 2的nTTV的大致平坦的表面, SUP> 2,其中nTTV是对于大致平坦表面的表面积归一化的总厚度变化,所述基底具有不小于约9.0cm的直径。
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公开(公告)号:CA2673523C
公开(公告)日:2012-10-09
申请号:CA2673523
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: TANIKELLA BRAHMANANDAM V , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
Abstract: A method of machining a sapphire substrate comprises grinding a first surface of a sapphire substrate using a first fixed abrasive and grinding said first surface of the sapphire substrate using a second fixed abrasive, wherein the second fixed abrasive has a smaller average grain size than the first fixed abrasive, and wherein the second, fixed abrasive is self -dressing.
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公开(公告)号:UA98314C2
公开(公告)日:2012-05-10
申请号:UAA200906859
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
IPC: B24B7/00 , B24B37/005 , H01L21/20 , H01L21/304
Abstract: Описанасапфирнаяподложка, котораяимеетв целомплоскуюповерхностьс кристаллографическойориентацией, выбраннойизгруппы, состоящейиза-плоскостной, r-плоскостной, m-плоскостнойи с-плоскостнойориентаций, ивеличиной nTTV неболеечемприблизительно 0,037 мкм/см, где nTTV являетсяобщейвариациейтолщины, нормированнойк площадиповерхностиуказаннойв целомплоскойповерхности, гдеуказаннаяподложкаимеетдиаметрнеменеепримерно .
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公开(公告)号:CA2673662A1
公开(公告)日:2008-07-10
申请号:CA2673662
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: VEDANTHAM RAMANUJAM , RIZZUTO ROBERT A , TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN
Abstract: A sapphire substrate includes a generally planar surface having a crystal lographic orientation selected from the group consisting of a-plane, r-plane , m-plane, and c-plane orientations, and having a nTTV of not greater than a bout 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diamete r not less than about 9.0 cm.
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公开(公告)号:CA2673662C
公开(公告)日:2012-07-24
申请号:CA2673662
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diameter not less than about 9.0 cm.
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公开(公告)号:UA97969C2
公开(公告)日:2012-04-10
申请号:UAA200906860
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
IPC: C30B29/20
Abstract: Описанасапфирнаяоснова, котораяимеетв целомплоскуюповерхностьс кристаллографическойориентацией, выбраннойизгруппы, котораясостоитиза-плоскостной, r-плоскостной, m-плоскостнойи с-плоскостнойориентаций, ивеличиной nTTV неболее, чемприблизительно 0,037 мкм/см, где nTTV являетсяобщейвариациейтолщины, нормированнойк площадиповерхностиуказаннойв целомплоскойповерхности, гдеуказанаосноваимеетдиаметрнеменее, чемприблизительно .
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公开(公告)号:UA97126C2
公开(公告)日:2012-01-10
申请号:UAA200906861
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: TANIKELLA BRAHMANANDAM V , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
Abstract: Процессмеханическойобработкисапфирнойосновывключает: шлифовкупервойповерхностисапфирнойосновыс помощьюпервогофиксированногоабразиваи шлифованияуказаннойпервойповерхностисапфирнойосновыс помощьювторогофиксированногоабразива, гдевторойфиксированныйабразивимеетменьшийсреднийразмерзерна, чемпервыйфиксированныйабразиви являетсясамозатачивающимся.
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公开(公告)号:CA2673660A1
公开(公告)日:2008-07-10
申请号:CA2673660
申请日:2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor: CHERIAN ISAAC K , VEDANTHAM RAMANUJAM , CHINNAKARUPPAN PALANIAPPAN , SIMPSON MATTHEW A , TANIKELLA BRAHMANANDAM V , RIZZUTO ROBERT A
IPC: C30B29/20
Abstract: A sapphire substrate includes a generally planar surface having a crystal lographic orientation selected from the group consisting of a-plane, r-plane , m-plane, and c-plane orientations, and having a nTTV of not greater than a bout 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diamete r not less than about 9.0 cm.
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