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公开(公告)号：JP2012178617A
公开(公告)日：2012-09-13
申请号：JP2012139635
申请日：2012-06-21
Inventor： BRAHMANANDAM V TANIKELLA , CHINNAKARPAN PARNIAPAN , RIZZUTO ROBERT A , ISAAC K CHERIAN , RAMANUJAM VEDANTAM
IPC: H01L21/304 , B24B1/00 , B24D3/00 , B24D3/10 , B24D3/32
Abstract: PROBLEM TO BE SOLVED: To provide a method of grinding a sapphire substrate suitable to manufacture a large high-quality substrate.SOLUTION: A method of machining a sapphire substrate comprises grinding a first surface of a sapphire substrate using a first fixed abrasive and grinding the first surface of the sapphire substrate using a second fixed abrasive. The second fixed abrasive has a smaller average grain size than the first fixed abrasive. The second fixed abrasive is self-dressing.
Abstract translation: 要解决的问题：提供一种研磨适合制造大型高品质基板的蓝宝石衬底的方法。 解决方案：一种加工蓝宝石衬底的方法包括：使用第一固定磨料研磨蓝宝石衬底的第一表面，并使用第二固定磨料研磨蓝宝石衬底的第一表面。 第二固定磨料具有比第一固定磨料更小的平均粒度。 第二固定磨料是自修整的。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2015039033A
公开(公告)日：2015-02-26
申请号：JP2014219182
申请日：2014-10-28
Applicant: サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド , Saint-Gobain Ceramics & Plastics Inc , サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド
Inventor： BRAHMANANDAM V TANIKELLA , CHINNAKARPAN PARNIAPAN , RIZZUTO ROBERT A , ISAAC K CHERIAN , RAMANUJAM VEDANTAM
IPC: H01L21/304 , C30B15/34 , C30B29/20 , C30B33/00 , H01L21/205
Abstract: 【課題】大きなサイズの高品質基板の製造に好適なサファイア基板を提供する。【解決手段】サファイア基板が、約25cm2以上の表面積を有する主要な面を含み、0.100μm/cm2以下の主要な面の標準化された湾曲であり、前記標準化された湾曲は、表面積を標準化した前記主要な面の湾曲測定であり、0.100μm/cm2以下の主要な面の標準化された平面度であり、標準化された前記平面度は、前記主要な面の表面積を標準化した前記主要な面の平面度測定であり、又は、それらの組み合わせを含むサファイア基板。【選択図】なし
Abstract translation: 要解决的问题：提供适合于制造大尺寸和高质量基材的蓝宝石衬底。解决方案：蓝宝石衬底包括具有约25cm及以上的表面积的主表面，并且主表面具有标准化 弓为0.100μm/ cm和下。 标准化的弓是通过主表面弓形测量获得的，具有标准化的表面积。 如果通过具有标准化表面积的主表面的平坦度测量获得，主表面具有0.100μm/ cm 2以下的标准化平坦度和标准化的平坦度。 或者蓝宝石衬底包括弓和平坦度的组合。
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公开(公告)号：JP2013128147A
公开(公告)日：2013-06-27
申请号：JP2013052556
申请日：2013-03-14
Inventor： BRAHMANANDAM V TANIKELLA , SIMPSON MATTHEW A , CHINNAKARPAN PARNIAPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
IPC: H01L21/304 , C30B29/20
CPC classification number: B24B7/228 , Y10T428/257 , Y10T428/26
Abstract: PROBLEM TO BE SOLVED: To provide a larger high quality substrate.SOLUTION: A sapphire substrate comprises a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having an nTTV of about 0.037 μm/cmor less, where the nTTV is total thickness variation normalized for the surface area of the generally planar surface, the substrate having a diameter of about 9.0 cm or greater.
Abstract translation: 要解决的问题：提供更大的高品质基板。 解决方案：蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向的大致平坦的表面，并且具有约0.037μm/ cm
2 或更小，其中nTTV是对于大致平坦的表面的表面积归一化的总厚度变化，基底具有约9.0cm或更大的直径。 版权所有（C）2013，JPO＆INPIT -
公开(公告)号：JP2012250344A
公开(公告)日：2012-12-20
申请号：JP2012185056
申请日：2012-08-24
Inventor： TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
CPC classification number: C30B29/20
Abstract: PROBLEM TO BE SOLVED: To provide a sapphire substrate that has a larger size than that of a conventional substrate and is of high quality.SOLUTION: The sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation: 要解决的问题：提供具有比常规基板大的尺寸的蓝宝石基板，并且具有高质量。 解决方案：蓝宝石衬底包括大致平坦的表面，其具有选自由a面，r面，m面和c面取向组成的组的结晶取向，并且具有不大于约的nTTV 0.037μm/ cm 2，其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，基底的直径不小于约9.0cm。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：WO2008083081A3
公开(公告)日：2008-11-06
申请号：PCT/US2007088576
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS , TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
Inventor： TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
CPC classification number: B24B7/228 , Y10T428/257 , Y10T428/26
Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm 2 , wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation: 蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向，且具有不大于约0.037μm/ cm 2的nTTV的大致平坦的表面， SUP> 2，其中nTTV是对于大致平坦表面的表面积归一化的总厚度变化，所述基底具有不小于约9.0cm的直径。
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Patent Agency Ranking
公开(公告)号：CA2673523C
公开(公告)日：2012-10-09
申请号：CA2673523
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor： TANIKELLA BRAHMANANDAM V , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
Abstract: A method of machining a sapphire substrate comprises grinding a first surface of a sapphire substrate using a first fixed abrasive and grinding said first surface of the sapphire substrate using a second fixed abrasive, wherein the second fixed abrasive has a smaller average grain size than the first fixed abrasive, and wherein the second, fixed abrasive is self -dressing.
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公开(公告)号：UA98314C2
公开(公告)日：2012-05-10
申请号：UAA200906859
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor： TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , VEDANTHAM RAMANUJAM
IPC: B24B7/00 , B24B37/005 , H01L21/20 , H01L21/304
Abstract: Описанасапфирнаяподложка, котораяимеетв целомплоскуюповерхностьс кристаллографическойориентацией, выбраннойизгруппы, состоящейиза-плоскостной, r-плоскостной, m-плоскостнойи с-плоскостнойориентаций, ивеличиной nTTV неболеечемприблизительно 0,037 мкм/см, где nTTV являетсяобщейвариациейтолщины, нормированнойк площадиповерхностиуказаннойв целомплоскойповерхности, гдеуказаннаяподложкаимеетдиаметрнеменеепримерно .
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公开(公告)号：CA2673662A1
公开(公告)日：2008-07-10
申请号：CA2673662
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor： VEDANTHAM RAMANUJAM , RIZZUTO ROBERT A , TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN
Abstract: A sapphire substrate includes a generally planar surface having a crystal lographic orientation selected from the group consisting of a-plane, r-plane , m-plane, and c-plane orientations, and having a nTTV of not greater than a bout 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diamete r not less than about 9.0 cm.
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公开(公告)号：CA2673660C
公开(公告)日：2012-07-24
申请号：CA2673660
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor： TANIKELLA BRAHMANANDAM V , SIMPSON MATTHEW A , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC K , VEDANTHAM RAMANUJAM
IPC: C30B29/20
Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
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公开(公告)号：AT545481T
公开(公告)日：2012-03-15
申请号：AT07855323
申请日：2007-12-21
Applicant: SAINT GOBAIN CERAMICS
Inventor： TANIKELLA BRAHMANANDAM , CHINNAKARUPPAN PALANIAPPAN , RIZZUTO ROBERT A , CHERIAN ISAAC , VEDANTHAM RAMANUJAM
Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
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