Method for realigning crystal orientation of single crystal body
    1.
    发明专利
    Method for realigning crystal orientation of single crystal body 有权
    用于实现单晶体晶体取向的方法

    公开(公告)号:JP2014058444A

    公开(公告)日:2014-04-03

    申请号:JP2013235337

    申请日:2013-11-13

    CPC classification number: B24B7/22 B24B49/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for realigning a crystal orientation of a single crystal body such as a sapphire in the production of a single crystal for a semiconductor of a nitride material of group III and V elements, especially GaN.SOLUTION: A method for altering a crystal orientation of a single crystal body includes a step of analyzing the crystal orientation of a single crystal body and a step of calculating an angle of orientation difference between a selected crystal orientation of the single crystal body and a projection of crystal orientation along a first main outer surface of the single crystal body. The method further includes a step of removing a material from at least a part of the first main outer surface to alter the angle of orientation difference.

    Abstract translation: 要解决的问题:提供一种用于在制造用于III族氮化物材料的半导体的单晶的制造中的蓝宝石等单晶体的晶体取向的方法以及V族元素,特别是GaN。解决方案:A 用于改变单晶体的晶体取向的方法包括分析单晶体的晶体取向的步骤和计算单晶体的选定晶体取向与晶体取向投影之间的取向差角度的步骤 沿着单晶体的第一主外表面。 该方法还包括从第一主外表面的至少一部分去除材料以改变取向差的角度的步骤。

    8.
    发明专利
    未知

    公开(公告)号:BR0012290A

    公开(公告)日:2002-04-16

    申请号:BR0012290

    申请日:2000-06-06

    Abstract: A polishing slurry, useful in optical or CMP applications, comprises a ceria with a BET surface area of at least 10 m2/gm. The slurry may be made by subjecting a commercial ceria slurry comprising agglomerates to a mechano-chemical treatment at a pH of from 9 to 11 using media that are low purity alpha alumina or zirconia. Preferred slurries maintain a positive surface charge at all pH values. CMP slurries preferably comprise in addition an anionic surfactant to aid in removal of surface residues.

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