Abstract:
PROBLEM TO BE SOLVED: To provide a method for realigning a crystal orientation of a single crystal body such as a sapphire in the production of a single crystal for a semiconductor of a nitride material of group III and V elements, especially GaN.SOLUTION: A method for altering a crystal orientation of a single crystal body includes a step of analyzing the crystal orientation of a single crystal body and a step of calculating an angle of orientation difference between a selected crystal orientation of the single crystal body and a projection of crystal orientation along a first main outer surface of the single crystal body. The method further includes a step of removing a material from at least a part of the first main outer surface to alter the angle of orientation difference.
Abstract:
PROBLEM TO BE SOLVED: To provide a CMP process and products thereof which can reduce dishing by removing metal selectively and relatively slowly. SOLUTION: In this CMP process and products thereof, alumina is used including α-alumina particles with a particle size of less than 50 nm and a surface area of at least 50 m 2 /g. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a sapphire substrate that has a larger size than that of a conventional substrate and is of high quality.SOLUTION: The sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation:要解决的问题:提供具有比常规基板大的尺寸的蓝宝石基板,并且具有高质量。 解决方案:蓝宝石衬底包括大致平坦的表面,其具有选自由a面,r面,m面和c面取向组成的组的结晶取向,并且具有不大于约的nTTV 0.037μm/ cm 2,其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化,基底的直径不小于约9.0cm。 版权所有(C)2013,JPO&INPIT
Abstract:
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 µm/cm 2 , wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diameter not less than about 9.0 cm.
Abstract translation:蓝宝石衬底包括具有选自由a面,r面,m面和c面取向组成的组的结晶取向,且具有不大于约0.037μm/ cm 2的nTTV的大致平坦的表面, SUP> 2,其中nTTV是对于大致平坦表面的表面积归一化的总厚度变化,所述基底具有不小于约9.0cm的直径。
Abstract:
A sapphire substrate includes a generally planar surface having a crystal lographic orientation selected from the group consisting of a-plane, r-plane , m-plane, and c-plane orientations, and having a nTTV of not greater than a bout 0.037 µm/cm2, wherein nTTV is total thickness variation normalized for surface area of teh generally planar surface, the substrate having a diamete r not less than about 9.0 cm.
Abstract:
Abrasive materials comprising silica-coated transitional alumina particles with an average particle size of less than 50 nanometers and a BET surface area of at least 50 m2/gm are useful in CMP processes either in the form of slurries or as fixed abrasives.
Abstract:
A polishing slurry, useful in optical or CMP applications, comprises a ceria with a BET surface area of at least 10 m2/gm. The slurry may be made by subjecting a commercial ceria slurry comprising agglomerates to a mechano-chemical treatment at a pH of from 9 to 11 using media that are low purity alpha alumina or zirconia. Preferred slurries maintain a positive surface charge at all pH values. CMP slurries preferably comprise in addition an anionic surfactant to aid in removal of surface residues.
Abstract:
Abrasive materials comprising silica-coated transitional alumina particles with an average particle size of less than 50 nanometers and a BET surface area of at least 50 m2/gm are useful in CMP processes either in the form of slurries or as fixed abrasives.
Abstract:
CMP processes and products employ aluminas comprising alpha alumina particle s having a particle width of less than 50 nanometers and a surface area of at least 50 m2/gm.