公开(公告)号：EP2760054A4

公开(公告)日：2015-06-24

申请号：EP12832998

申请日：2012-09-03

Applicant: SONY CORP ,  SUZHOU INST NANO TECH & NANO B

Inventor： YOSHIDA HIROSHI ,  IKEDA MASAO ,  UCHIDA SHIRO ,  TANGE TAKASHI ,  KURAMOTO MASARU ,  ARIMOCHI MASAYUKI ,  YANG HUI ,  LU SHULONG ,  ZHENG XINHE

IPC: H01L31/0687 ,  H01S5/40

CPC classification number: H01L31/0725 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0735 ,  H01S5/0262 ,  H01S5/0425 ,  H01S5/18325 ,  H01S5/3095 ,  H01S5/4043 ,  Y02E10/544

公开(公告)号：EP2760055A4

公开(公告)日：2015-07-01

申请号：EP12833198

申请日：2012-09-03

Applicant: SONY CORP ,  SUZHOU INST NANO TECH & NANO B

Inventor： YOSHIDA HIROSHI ,  IKEDA MASAO ,  UCHIDA SHIRO ,  TANGE TAKASHI ,  KURAMOTO MASARU ,  ARIMOCHI MASAYUKI ,  YANG HUI ,  LU SHULONG ,  ZHENG XINHE

IPC: H01L31/0687 ,  H01L31/0304 ,  H01L31/0352

CPC classification number: H01L31/0687 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/06875 ,  Y02E10/544

Abstract: A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. It includes a plurality of sub-cells 11, 12, 13, and 14 that are laminated, and each include a first compound semiconductor layer and a second compound semiconductor layer that are laminated. At least one predetermined sub-cell 11 is configured of first layers 11A 1 and 11A 2 and a second layer 11C. In each of the first layers 11A 1 and 11A 2 , a 1-A layer 11A A and a 1-B layer 11A B are laminated. In the second layer 11C, a 2-A layer 11C A and a 2-B layer 11C B are laminated. A composition A of the 1-A layer 11A A and the 2-A layer 11C A is determined based on a value of a band gap of the predetermined sub-cell 11. A composition B of the 1-B layer 11A B and the 2-B layer 11C B is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of the 1-B layer 11A B and the 2-B layer 11C B are determined based on a difference between the base lattice constant and a lattice constant of the composition B, and on the thickness of the 1-A layer 11A A and the thickness of the 2-A layer 11C A .

公开(公告)号：JP2006352084A

公开(公告)日：2006-12-28

申请号：JP2006105647

申请日：2006-04-06

Applicant: SONY CORP

Inventor： OMAE AKIRA ,  TOMITANI SHIGETAKA ,  MAEDA YUUKI ,  SHIOMI HARUNORI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  YANASHIMA KATSUNORI ,  TANGE TAKASHI ,  YASUDA ATSUSHI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode of significantly high light emitting efficiency that can be manufactured by one-time epitaxial growth at a low cost, and a manufacturing method thereof. SOLUTION: In a recess 11a formed on one main surface of a sapphire substrate 11, growth in a lateral direction is performed from a GaN layer 12, after burying the recess 11a by making the GaN layer 12 grow after passing through a state of a triangular cross section shape with its bottom face as a base. A light emitting diode structure is formed on the GaN layer 12 by growing a GaN based semiconductor layer including an active layer on the GaN layer 12. By using the GaN based light emitting diode, a light emitting diode backlight, etc. is manufactured. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2012109499A

公开(公告)日：2012-06-07

申请号：JP2010258883

申请日：2010-11-19

Applicant: SONY CORP

Inventor： TANGE TAKASHI ,  TOMITANI SHIGETAKA

IPC: H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a manufacturing method of the same, capable of suppressing reliably a facet degradation caused by interface oxidation and strain application.SOLUTION: The semiconductor laser element comprises: a laser structure part 107 having resonator surfaces 108 and 109 opposing to each other; and protective films 110 and 120 formed on at least one of opposing resonator surfaces. The protective films 110 and 120 are formed with nitride dielectric films having a multilevel structure whose crystal structures are amorphous layers 111 and 121 and polycrystalline layers 112 and 122 from a side contacting a resonator surface.