公开(公告)号：JP2001189091A

公开(公告)日：2001-07-10

申请号：JP2000323380

申请日：2000-10-23

Applicant: ST MICROELECTRONICS SA

Inventor： CHEHADI MOHAMAD

IPC: G11C16/06 ,  G06K19/07 ,  G11C5/14 ,  H02M3/07

Abstract: PROBLEM TO BE SOLVED: To generate high voltage with less energy in a power source receiving electric power by radio. SOLUTION: An integrated circuit card is provided with voltage regulators 210, 230 receiving electric power with a form of a radio frequency signal SR and generating first power source voltage Vcc, and with a voltage booster circuit 232 receiving first power source voltage Vcc by a first power source input terminal 231, receiving second power source voltage being higher than the first power source voltage Vcc by a second power source input terminal 232, and generating high voltage HV.

公开(公告)号：DE69815258D1

公开(公告)日：2003-07-10

申请号：DE69815258

申请日：1998-10-21

Applicant: ST MICROELECTRONICS SA

Inventor： MANI CHRISTOPHE ,  CHEHADI MOHAMAD

IPC: G06F1/00 ,  G06F12/14 ,  G06F21/00 ,  G11C8/20 ,  G11C16/22 ,  G11C16/06 ,  G11C8/00

公开(公告)号：FR2800214B1

公开(公告)日：2001-12-28

申请号：FR9913391

申请日：1999-10-22

Applicant: ST MICROELECTRONICS SA

Inventor： CHEHADI MOHAMAD

IPC: G11C16/06 ,  G06K19/07 ,  G11C5/14 ,  H02M3/07 ,  H03K17/10

Abstract: An integrated circuit card receives power in the form of a radio frequency signal and includes a voltage generator that produces a first power supply voltage. The card also includes a voltage booster circuit for producing a high voltage that receives the first power supply voltage at a first supply input terminal. The voltage booster circuit also receives a second power supply voltage higher than the first power supply voltage at a second supply input terminal.

公开(公告)号：DE60032439T2

公开(公告)日：2007-10-11

申请号：DE60032439

申请日：2000-09-15

Applicant: ST MICROELECTRONICS SA

Inventor： CHEHADI MOHAMAD

IPC: G11C16/06 ,  H03K17/10 ,  G06K19/07 ,  G11C5/14 ,  H02M3/07

Abstract: An integrated circuit card receives power in the form of a radio frequency signal and includes a voltage generator that produces a first power supply voltage. The card also includes a voltage booster circuit for producing a high voltage that receives the first power supply voltage at a first supply input terminal. The voltage booster circuit also receives a second power supply voltage higher than the first power supply voltage at a second supply input terminal.

公开(公告)号：DE60032439D1

公开(公告)日：2007-02-01

申请号：DE60032439

申请日：2000-09-15

Applicant: ST MICROELECTRONICS SA

Inventor： CHEHADI MOHAMAD

IPC: G11C16/06 ,  H03K17/10 ,  G06K19/07 ,  G11C5/14 ,  H02M3/07

Abstract: An integrated circuit card receives power in the form of a radio frequency signal and includes a voltage generator that produces a first power supply voltage. The card also includes a voltage booster circuit for producing a high voltage that receives the first power supply voltage at a first supply input terminal. The voltage booster circuit also receives a second power supply voltage higher than the first power supply voltage at a second supply input terminal.

公开(公告)号：FR2821974A1

公开(公告)日：2002-09-13

申请号：FR0103284

申请日：2001-03-12

Applicant: ST MICROELECTRONICS SA

Inventor： NAURA DAVID ,  BERTRAND BERTRAND ,  CHEHADI MOHAMAD

IPC: G11C16/12 ,  G11C7/20 ,  G11C16/02

Abstract: A circuit produces a voltage for the erasure or programming of a memory cell. The circuit includes a capacitor, and a discharge circuit connected to a first terminal of the capacitor. The discharge circuit includes a first transistor, a drain of which is connected to the first terminal of the capacitor. The first transistor activates the discharge circuit when a discharge signal is received by a gate of the first transistor. The discharge circuit includes a slow discharge arm and a fast discharge arm parallel-connected to the source of the first transistor. The discharge circuit produces a low discharge current or a high discharge current for discharging the capacitor as a function of an operating mode selection signal.

公开(公告)号：FR2795881B1

公开(公告)日：2001-08-31

申请号：FR9908663

申请日：1999-06-30

Applicant: ST MICROELECTRONICS SA

Inventor： DEVIN JEAN ,  CHEHADI MOHAMAD

IPC: G11C16/06 ,  G05F1/00 ,  G06K19/07 ,  G11C16/12 ,  G11C16/30 ,  H02M3/155 ,  H02M3/08 ,  G11C5/14 ,  H04B5/00

公开(公告)号：FR2798769B1

公开(公告)日：2004-03-12

申请号：FR9911858

申请日：1999-09-20

Applicant: ST MICROELECTRONICS SA

Inventor： CHEHADI MOHAMAD

IPC: G11C7/02 ,  G11C16/10 ,  G11C16/32 ,  G06K19/07 ,  G11C16/02

公开(公告)号：FR2822286A1

公开(公告)日：2002-09-20

申请号：FR0103659

申请日：2001-03-19

Applicant: ST MICROELECTRONICS SA

Inventor： BERTRAND BERTRAND ,  CHEHADI MOHAMAD ,  NAURA DAVID

IPC: G11C16/04 ,  G11C16/12 ,  G11C16/02 ,  G11C7/12

Abstract: The electrically programmable erasable memory has cells (CEij) connected to word lines (WLi) and bit lines (BLj) arranged in columns (COLk). There is a selection column lock (LSCIk). Each lock column selected has a unit delivering a detection of a grid control signal, a signal selecting bit lines, as a function of the output locking element during the phases of programming and read oF the memory cells.

公开(公告)号：FR2795881A1

公开(公告)日：2001-01-05

申请号：FR9908663

申请日：1999-06-30

Applicant: ST MICROELECTRONICS SA

Inventor： DEVIN JEAN ,  CHEHADI MOHAMAD

IPC: G11C16/06 ,  G05F1/00 ,  G06K19/07 ,  G11C16/12 ,  G11C16/30 ,  H02M3/155 ,  H02M3/08 ,  G11C5/14 ,  H04B5/00

Abstract: The invention concerns an integrated circuit comprising a detection circuit (10) and a rectifier circuit (20) associated in series, to supply a rectified voltage (HV1, HV1), and a low voltage regulating circuit (30, 34) which receives the rectified voltage (HV1) and supplies a low voltage (Vcc). The invention is characterised in that the circuit further comprises a voltage producing circuit (100) which receives the rectified voltage (HV1) and produces high voltage (HT) different from the low voltage (Vcc). In one embodiment, the circuit also includes a memory (40) comprising a memory plane (42), the memory plane receiving the low voltage (Vcc) and the high voltage (HT).